SSF4606

DESCRIPTION The SSF4606 uses advanced trench technology MOSFET to provide excellent RDS(ON) and low gate charge. The complementary MOSFET may be used in power inverters, and other applications. GENERAL FEATURES ●N-Channel VDS = 30V,ID = 6.9A RDS(ON) < 42mΩ @ VGS=4.5V RDS(ON) < 28mΩ @ VGS=10V ●P-Channel VDS = -30V,ID = -6A RDS(ON) < 58mΩ @ VGS=-4.5V RDS(ON) < 35mΩ @ VGS=-10V ●High Power and current handing capability ●Lead free product is acquired ●Surface Mount Package SSF4606 N-channel P-channel Schematic diagram Marking and pin Assignment PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size 4606 SSF4606 SOP-8 Ø330mm SOP-8 top view Tape width 12mm Quantity 3000 units ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25℃ TA=70℃ ID Pulsed Drain Current (Note 1) IDM Maximum Power Dissipation TA=25℃ TA=70℃ PD Operating Junction and Storage Temperature Range TJ,TSTG N-Channel 30 ±20 6.9 6.0 30 2.0 1.44 -55 To 150 P-Channel -30 ±20 -6 -5.0 -30 2.0 1.44 -55 To 150 THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note2) RθJA N-Ch P-Ch 62.5 62.5 Unit V V A A W ℃ ℃/W ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition OFF CHARACTERISTICS Min Typ Max Unit ©Silikron Semiconductor CO.,LTD. 1 http://www.silikron.com v1.0 Drain-Source Breakdown Voltage Zero Gate V...