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SSF4015 Dataheets PDF



Part Number SSF4015
Manufacturers Silikron Semiconductor
Logo Silikron Semiconductor
Description MOSFET
Datasheet SSF4015 DatasheetSSF4015 Datasheet (PDF)

Main Product Characteristics: VDSS RDS(on) -40V 11mΩ (typ.) ID -40A TO-252 (D-PAK) Features and Benefits:  Advanced trench MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  High Power and current handing capability  175℃ operating temperature SSF4015 SSSSSFF344600113525D D G S Marking and pin Schematic diagram Assignment Description: It utilizes the advanced trench processing techniq.

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Main Product Characteristics: VDSS RDS(on) -40V 11mΩ (typ.) ID -40A TO-252 (D-PAK) Features and Benefits:  Advanced trench MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  High Power and current handing capability  175℃ operating temperature SSF4015 SSSSSFF344600113525D D G S Marking and pin Schematic diagram Assignment Description: It utilizes the advanced trench processing techniques to achieve extremely low on resistance and low gate charge. These features combine to make this design an extremely efficient and reliable device for use in PWM, load switching and a wide variety of other applications. Absolute max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM ISM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Pulsed Source Current (Body Diode)② Power Dissipation③ Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=0.1mH Single Pulse Avalanche Current @ L=0.1mH Operating Junction and Storage Temperature Range Max. -40 -28 -120 -120 75 -40 ± 20 40 28 -55 to + 175 Units A W V V mJ A °C ©Silikron Semiconductor CO.,LTD. 2013.07.19 www.silikron.com Version : 1.3 page 1 of 6 SSF4015 Thermal Resistance Symbol RθJA RJC Characterizes Junction-to-ambient (t ≤ 10s) ④ Junction-to-Ambient (PCB mounted, steady-state) ④ Maximum Junction-to-Case⑤ Value 14 40 2 Unit ℃/W ℃/W ℃/W Electrical Characterizes @TA=25℃ unless otherwise specified Symbol BVDSS Parameter Drain-to-Source breakdown voltage Min. -40 Typ. — Max. — Units V — 11 15 Conditions VGS = 0V, ID = 250μA VGS=10V, ID = 12A RDS(on) Static Drain-to-Source on-resistance VGS(th) IDSS IGSS G(fs) Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate threshold voltage Drain-to-Source leakage current Gate-to-Source forward leakage Gate-to-Source reverse leakage Forward transconductance Total gate charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on delay time Rise time Turn-Off delay time Fall time Input capacitance Output capacitance Reverse transfer capacitance — 14.3 — — 18.5 25 — 23.6 — -1 -3 — — -1 — — -5 — — 100 — — -100 5 27 — — 57.4 40 — 10.8 6 — 11.9 15 — 15.2 — — 23.7 — — 53.3 — — 12.7 — — 5188 — — 376 — — 293 — TJ = 125℃ mΩ VGS=4.5V, ID = 8A TJ = 125℃ V VDS = VGS, ID =250uA VDS =-40V,VGS = 0V μA TJ = 55°C VGS =20V nA VGS = -20V S VDS=-5V,ID=-12.0A ID=-20A, nC VDD=-12V, VGS=-10V VDD=-18.8V,ID=-12.5A, ns RL=1.50Ω,RG=3.00Ω, VGS=-10V Vds=-20V, pF Vgs=0V, f=1MHZ ©Silikron Semiconductor CO.,LTD. 2013.07.19 www.silikron.com Version : 1.3 page 2 of 6 SSF4015 Source-Drain Ratings and Characteristics Symbol IS VSD Parameter Maximum Body-Diode Continuous Curren Diode Forward Voltage Min. Typ. — -40 — -0.74 Max. — 1.2 Units Conditions A V TJ=25Cْ ,IS=-1A,VGS=0V Test circuits and Waveforms EAS Test Circuit: Gate charge test circuit: Switching Time Test Circuit: Switching Waveforms: Notes: ①Calculated continuous current based on maximum allowable junction temperature. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C ©Silikron Semiconductor CO.,LTD. 2013.07.19 www.silikron.com Version : 1.3 page 3 of 6 Mechanical Data: SSF4015 ©Silikron Semiconductor CO.,LTD. 2013.07.19 www.silikron.com Version : 1.3 page 4 of 6 Ordering and Marking Information Device Marking: SSF4015 Package (Available) TO-252 Operating Temperature Range C : -55 to 175ºC SSF4015 Devices per Unit Option1: Package Units/ Tubes/Inner Units/Inner Type Tube Box Box TO-252 80 50 4000 Inner Boxes/Carton Box 10 Units/Carton Box 40000 Option2: Package Units/ Tapes/Inner Units/Inner Type Tape Box Box TO-252 2500 2 5000 Inner Boxes/Carton Box 7 Units/Carton Box 35000 Option3: Package Units/ Tapes/Inner Type Tape Box TO-252 2500 1 Units/Inner Box 2500 Inner Boxes/Carton Box 10 Units/Carton Box 25000 ©Silikron Semiconductor CO.,LTD. 2013.07.19 www.silikron.com Version : 1.3 page 5 of 6 SSF4015 ATTENTION: ■ Any and all Silikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your Silikron representative nearest you before using any Silikron products described or contained herein in such applications. ■ Silikron assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated va.


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