Document
Main Product Characteristics:
VDSS RDS(on)
-40V 11mΩ (typ.)
ID -40A
TO-252 (D-PAK)
Features and Benefits:
Advanced trench MOSFET process technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge High Power and current handing capability 175℃ operating temperature
SSF4015
SSSSSFF344600113525D
D G
S
Marking and pin Schematic diagram Assignment
Description:
It utilizes the advanced trench processing techniques to achieve extremely low on resistance and low gate charge. These features combine to make this design an extremely efficient and reliable device for use in PWM, load switching and a wide variety of other applications.
Absolute max Rating:
Symbol ID @ TC = 25°C ID @ TC = 100°C IDM ISM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Pulsed Source Current (Body Diode)② Power Dissipation③
Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=0.1mH Single Pulse Avalanche Current @ L=0.1mH Operating Junction and Storage Temperature Range
Max. -40 -28 -120 -120 75 -40 ± 20 40 28 -55 to + 175
Units
A
W V V mJ A °C
©Silikron Semiconductor CO.,LTD.
2013.07.19 www.silikron.com
Version : 1.3
page 1 of 6
SSF4015
Thermal Resistance
Symbol
RθJA RJC
Characterizes
Junction-to-ambient (t ≤ 10s) ④ Junction-to-Ambient (PCB mounted, steady-state) ④ Maximum Junction-to-Case⑤
Value
14 40 2
Unit
℃/W ℃/W ℃/W
Electrical Characterizes @TA=25℃ unless otherwise specified
Symbol BVDSS
Parameter Drain-to-Source breakdown voltage
Min. -40
Typ. —
Max. —
Units V
— 11 15
Conditions VGS = 0V, ID = 250μA
VGS=10V, ID = 12A
RDS(on)
Static Drain-to-Source on-resistance
VGS(th)
IDSS
IGSS
G(fs) Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Gate threshold voltage
Drain-to-Source leakage current
Gate-to-Source forward leakage Gate-to-Source reverse leakage
Forward transconductance
Total gate charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on delay time Rise time Turn-Off delay time Fall time Input capacitance Output capacitance Reverse transfer capacitance
— 14.3 — — 18.5 25
— 23.6 —
-1 -3 — — -1 — — -5
— — 100
— — -100
5 27 —
— 57.4 40
— 10.8
6
— 11.9 15
— 15.2 — — 23.7 — — 53.3 — — 12.7 — — 5188 — — 376 —
— 293 —
TJ = 125℃ mΩ
VGS=4.5V, ID = 8A
TJ = 125℃ V VDS = VGS, ID =250uA
VDS =-40V,VGS = 0V μA
TJ = 55°C
VGS =20V nA
VGS = -20V
S VDS=-5V,ID=-12.0A
ID=-20A, nC VDD=-12V,
VGS=-10V
VDD=-18.8V,ID=-12.5A, ns RL=1.50Ω,RG=3.00Ω,
VGS=-10V
Vds=-20V, pF Vgs=0V,
f=1MHZ
©Silikron Semiconductor CO.,LTD.
2013.07.19 www.silikron.com
Version : 1.3
page 2 of 6
SSF4015
Source-Drain Ratings and Characteristics
Symbol IS VSD
Parameter Maximum Body-Diode Continuous Curren Diode Forward Voltage
Min. Typ. — -40 — -0.74
Max. — 1.2
Units Conditions A V TJ=25Cْ ,IS=-1A,VGS=0V
Test circuits and Waveforms
EAS Test Circuit:
Gate charge test circuit:
Switching Time Test Circuit:
Switching Waveforms:
Notes:
①Calculated continuous current based on maximum allowable junction temperature. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance. ④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
©Silikron Semiconductor CO.,LTD.
2013.07.19 www.silikron.com
Version : 1.3
page 3 of 6
Mechanical Data:
SSF4015
©Silikron Semiconductor CO.,LTD.
2013.07.19 www.silikron.com
Version : 1.3
page 4 of 6
Ordering and Marking Information
Device Marking: SSF4015
Package (Available) TO-252
Operating Temperature Range C : -55 to 175ºC
SSF4015
Devices per Unit
Option1:
Package Units/ Tubes/Inner Units/Inner
Type Tube Box
Box
TO-252 80
50
4000
Inner Boxes/Carton Box
10
Units/Carton Box
40000
Option2:
Package Units/ Tapes/Inner Units/Inner
Type Tape Box
Box
TO-252 2500
2
5000
Inner Boxes/Carton Box
7
Units/Carton Box
35000
Option3:
Package Units/ Tapes/Inner Type Tape Box
TO-252 2500
1
Units/Inner Box
2500
Inner Boxes/Carton Box
10
Units/Carton Box
25000
©Silikron Semiconductor CO.,LTD.
2013.07.19 www.silikron.com
Version : 1.3
page 5 of 6
SSF4015
ATTENTION:
■ Any and all Silikron products described or contained herein do not have specifications that can handle applications
that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your Silikron representative nearest you before using any Silikron products described or contained herein in such applications.
■ Silikron assumes no responsibility for equipment failures that result from using products at values that exceed,
even momentarily, rated va.