SSF4004S

Main Product Characteristics VDSS 40V RDS(on) 2.3mΩ (typ.) ID 180A ① Features and Benefits TO-220  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  175℃ operating temperature SSF4004S Marking and Pin Assignment Schematic Diagram Description SSF4004S utilizes the latest processing techniques to achieve high cell density and reduces on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute Max Rating Symbol ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V(Silicon Limited) Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V(Package Limited) Pulsed Drain Current ② Power Dissipation ③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=0.3mH Avalanche Current @ L=0.3mH Operating Junction and Storage Temperature Range Max. 180 ① 120 ① 75 710 200 1.3 40 ± 20 960 80 -55 to +175 Units A W W/°C V V mJ A °C ©Silikron Semiconductor CO.,LTD. 2010.06.20 www.silikron.com Version : 1.1 page 1 of 8 SSF4004S Thermal Resistance Symbol RθJC RθJA Characteristics Junction-to-case ③ Junction-to-ambient (...