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TC551001BTRL-85L Dataheets PDF



Part Number TC551001BTRL-85L
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description SILICON GATE CMOS STATIC RAM
Datasheet TC551001BTRL-85L DatasheetTC551001BTRL-85L Datasheet (PDF)

www.DataSheet4U.com TOSHIBA TC551001BPL/BFL/BFTL/BTRL-70L/85L SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM Description The TC551001BPL is a 1,048,576 bits static random access memory organized as 131,072 words by 8 bits using CMOS technology, and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating current of 5mA/MHz (typ.) and a minimum cycle time of 70ns. When CE1 is a logical high, or CE2 is low, the dev.

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www.DataSheet4U.com TOSHIBA TC551001BPL/BFL/BFTL/BTRL-70L/85L SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM Description The TC551001BPL is a 1,048,576 bits static random access memory organized as 131,072 words by 8 bits using CMOS technology, and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating current of 5mA/MHz (typ.) and a minimum cycle time of 70ns. When CE1 is a logical high, or CE2 is low, the device is placed in a low power standby mode in which the standby current is 2µA typically. The TC551001BPL has three control inputs. Chip Enable inputs (CE1, CE2) allow for device selection and data retention control, while an Output Enable input (OE) provides fast memory access. The TC551001BPL is suitable for use in microprocessor application systems where high speed, low power, and battery backup are required. The TC551001BPL is offered in a standard dual-in-line 32-pin plastic package, a small outline plastic package, and a thin small outline plastic package (forward, reverse type). Features Pin Connection (Top View) • Low power dissipation: 27.5mW/MHz (typ.) • Standby current: 4µA (max.) at Ta = 25°C • 5V single power supply • Access time (max.) TC551001BPL/BFL/BFTL/BTRL -70L -85L Access Time CE1 Access Time CE2 Access Time OE Access Time 70ns 70ns 70ns 35ns 85ns 85ns 85ns 45ns • Power down feature: CE1, CE2 • Data retention supply voltage: 2.0 ~ 5.5V • Inputs and outputs directly TTL compatible • Package TC551001BPL : DIP32-P-600 Pin Names TC551001BFL TC551001BFTL TC551001BTRL : SOP32-P-525 : TSOP32-P-0820 : TSOP32-P-0820A A0 ~ A16 Address Inputs R/W Read/Write Control Input OE Output Enable Input CE1, CE2 Chip Enable Inputs I/O1 ~ I/O8 Data Input/Output VDD GND Power (+5V) Ground N.C. No Connection TSOP Pinout PIN NO. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 PIN NAME A11 A9 A8 A13 R/W CE2 A15 VDD NC A16 A14 A12 A7 A6 A5 A4 PIN NO. 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 PIN NAME A3 A2 A1 A0 I/O1 I/O2 I/O3 GND I/O4 I/O5 I/O6 I/O7 I/O8 CE1 A10 OE TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC. 1 DataSheet4 U .com www.DataSheet4U.com TC551001BPL/BFL/BFTL/BTRL-70L/85L Block Diagram Static RAM SR01020795 Operating Mode OPERATION MODE Read Write Output Deselect Standby * H or L CE1 CE2 LH LH LH H* *L Maximum Ratings SYMBOL ITEM VDD VIN VI/O PD TSOLDER TSTRG TOPR Power Supply Voltage Input Voltage Input and Output Voltage Power Dissipation Soldering Temperature (10s) Storage Temperature Operating Temperature * -3.0V at pulse width of 50ns Max ** SOP OE R/W I/O1 ~ I/O8 POWER L H DOUT IDDO * L DIN IDDO H H High-Z IDDO * * High-Z IDDS * * High-Z IDDS RATING -0.3 ~ 7.0 -0.3* ~ 7.0 -0.5 ~ VDD + 0.5 1.0/0.6** 260 -55 ~ 150 0 ~ 70 UNIT V V V W °C °C °C 2 DataSheet4 U .com TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC. www.DataSheet4U.com SR01020795 Static RAM TC551001BPL/BFL/BFTL/BTRL-70L/85L DC Recommended Operating Conditions SYMBOL PARAMETER VDD Power Supply Voltage VIH Input High Voltage VIL Input Low Voltage VDH Data Retention Supply Voltage * -3.0V at pulse width of 50ns Max. MIN. 4.5 2.2 -0.3* 2.0 TYP. MAX. UNIT 5.0 5.5 – VDD + 0.3 – 0.8 – 5.5 V DC and Operating Characteristics (Ta = 0 ~ 70ºC, VDD = 5V±10%) SYMBOL PARAMETER TEST CONDITION MIN. TYP. MAX. UNIT ILI Input Leakage Current ILO Output Leakage Current IOH Output High Current IOL Output Low Current IDDO1 Operating Current IDDO2 IDDS1 IDDS2(1) Standby Current VIN = 0 ~ VDD – – ±1.0 µA CE1 = VIH or CE2 = VIL or R/W = VIL or OE = VIH, VOUT = 0 ~ VDD – – ±1.0 µA VOH = 2.4V -1.0 – – mA VOL = 0.4V 4.0 – – mA CE1 = VIL and CE2 = VIH Min. – – 70 and R/W = VIH, IOUT = 0mA tcycle 1µs – – 20 Other Inputs = VIH/VIL CE1 = 0.2V and CE2 = VDD - 0.2V R/W = VDD - 0.2V IOUT = 0mA Other Inputs = VDD - 0.2V/0.2V Min. – – 60 mA tcycle 1µs – – 10 CE1 = VIH or CE2 = VIL – – 3 mA CE1 = VDD - 0.2V or CE2 = 0.2V VDD = 2.0V ~ 5.5V Ta = 0 ~ 70°C – – 30 Ta = 25°C µA –2 4 Note: (1) In standby mode with CE1 ≥ VDD - 0.2V, these specification limits are guaranteed under the condition of CE2 ≥ VDD - 0.2V or CE2 ≤ 0.2V. Capacitance (Ta = 25ºC, f = 1MHz) SYMBOL PARAMETER TEST CONDITION CIN Input Capacitance COUT Output Capacitance VIN = GND VOUT = GND Note: This parameter is periodically sampled and is not 100% tested. MAX. 10 10 UNIT pF DataSheet4 U .com TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC. 3 www.DataSheet4U.com TC551001BPL/BFL/BFTL/BTRL-70L/85L Static RAM AC Characteristics (Ta = 0 ~ 70°C, VDD = 5V±10%) Read Cycle SYMBOL PARAMETER tRC tACC tCO1 tCO2 tOE tCOE tOEE tOD tODO tOH Read Cycle Time Address Access Time CE1 Access Time CE2 Access Time Output Enable to Output in Valid Chip Enable (CE1, CE2) to Output in Low-Z Output Enable to Output in Low-Z Chip Enable (CE1, CE2) to Output in High-Z Output Enable to Output in High-Z Output Data Hold Time .


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