N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
▼ 100% Avalanche Test ▼ Fast Switching Characteristic ▼ Simple Drive Requirement
AP10N...
Description
Advanced Power Electronics Corp.
▼ 100% Avalanche Test ▼ Fast Switching Characteristic ▼ Simple Drive Requirement
AP10N70R/P
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D BVDSS
600V
RDS(ON)
0.6Ω
G ID 10A
S
Description
AP10N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications.Both TO-220 and TO-262 type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching,ruggedized design and cost-effectiveness.
G D S
The TO-220 and TO-262 package is widely preferred for commercialindustrial applications. The device is suited for switch mode power supplies, DC-AC converters and high current high speed switching circuits.
G DS
Absolute Maximum Ratings
Symbol
Parameter
VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃
EAS IAR TSTG TJ
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor Single Pulse Avalanche Energy2 Avalanche Current Storage Temperature Range Operating Junction Temperature Range
Rating 600 ± 30 10 6.3 40 174 1.39 50 10
-55 to 150 -55 to 150
TO-262(R)
TO-220(P)
Units V V A A A W
W/℃ mJ A ℃ ℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value 0.72
62
Unit ℃/W ℃/W
Data & specificat...
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