2SK4099LS

Ordering number : ENA0777C 2SK4099LS N-Channel Power MOSFET 600V, 8.5A, 0.94Ω, TO-220F-3FS http://onsemi.com Features ON-resistance RDS(on)=0.72Ω (typ.) 10V drive Input capacitance Ciss=750pF Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain to Source Voltage VDSS 600 V Gate to Source Voltage VGSS ±30 V Drain Current (DC) IDc*1 IDpack*2 Limited only by maximum temperature Tch=150°C Tc=25°C (Our ideal heat dissipation condition)*3 8.5 A 6.9 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 34 A Allowable Power Dissipation PD Tc=25°C (Our ideal heat dissipation condition)*3 2.0 W 35 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *4 EAS 197 mJ Avalanche Current *5 IAV 8.5 A Note :*1 Shows chip capability *2 Package limited *3 Our condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *4 VDD=50V, L=1mH, IAV=8.5A (Fig.1) *5 L≤5mH, single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7528-001 10.16 3.18 4.7 2SK4099LS-1E 2.54 Ordering ...