CPH3362

Ordering number : ENA2321A CPH3362 Power MOSFET 100V, 1.7Ω, 0.7A, Single P-Channel http://onsemi.com Features  On-resistance RDS(on)1=1.3Ω (typ)  4V drive  Halogen free compliance Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Drain to Source Voltage Gate to Source Voltage VDSS VGSS Drain Current (DC) Drain Current (Pulse) Power Dissipation ID IDP PW10s, duty cycle1% PD When mounted on ceramic substrate (900mm20.8mm) Junction Temperature Tj Storage Temperature Tstg This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Value 100 20 0.7 2.8 1 150 55 to +150 Unit V V A A W C C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Thermal Resistance Ratings Parameter Junction to Ambient When mounted on ceramic substrate (900mm20.8mm) Symbol RJA Value 125 Unit C/W Electrical Characteristics at Ta  25C Parameter Drain to Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate to Source Leakage Current Gate Threshold Voltage Forward Transconductance Static Drain to Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(th) gFS RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss Conditions ID=1mA, VGS=0V VDS=-100V, VGS=0V VGS=±16V,...