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CPH3456 Dataheets PDF



Part Number CPH3456
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Power MOSFET
Datasheet CPH3456 DatasheetCPH3456 Datasheet (PDF)

CPH3456 Power MOSFET 20V, 71mΩ, 3.5A, Single N-Channel www.onsemi.com Features • ON-Resistance RDS(on)1=54mΩ (typ) • 1.8V Drive • Pb-Free, Halogen Free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Value Unit Drain to Source Voltage VDSS 20 V Gate to Source Voltage VGSS ±12 V Drain Current (DC) ID 3.5 A Drain Current (Pulse) PW≤10μs, duty cycle≤1% IDP 14 A Power Dissipation When mounted on ceramic substrate (900mm2×0.8mm) Junction Te.

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CPH3456 Power MOSFET 20V, 71mΩ, 3.5A, Single N-Channel www.onsemi.com Features • ON-Resistance RDS(on)1=54mΩ (typ) • 1.8V Drive • Pb-Free, Halogen Free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Value Unit Drain to Source Voltage VDSS 20 V Gate to Source Voltage VGSS ±12 V Drain Current (DC) ID 3.5 A Drain Current (Pulse) PW≤10μs, duty cycle≤1% IDP 14 A Power Dissipation When mounted on ceramic substrate (900mm2×0.8mm) Junction Temperature PD Tj 1.0 W 150 °C Storage Temperature Tstg −55 to +150 °C This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Thermal Resistance Ratings Parameter Junction to Ambient When mounted on ceramic substrate (900mm2×0.8mm) Symbol RθJA Value Unit 125 °C/W VDSS 20V RDS(on) Max 71 mΩ@4.5V 103 mΩ@2.5V 156 mΩ@1.8V ID Max 3.5A Electrical Connection N-Channel 3 1 : Gate 1 2 : Source 3 : Drain 2 Packing Type:TL Marking TL Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. LN LOT No. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2015 January 2015 - Rev. 2 1 Publication Order Number : CPH3456/D Electrical Characteristics at Ta = 25°C Parameter Symbol Drain to Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate to Source Leakage Current Gate Threshold Voltage Forward Transconductance Static Drain to Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain “Miller” Charge Forward Diode Voltage V(BR)DSS IDSS IGSS VGS(th) gFS RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD CPH3456 Conditions ID=1mA, VGS=0V VDS=20V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=1.5A ID=1.5A, VGS=4.5V ID=1A, VGS=2.5V ID=0.5A, VGS=1.8V VDS=10V, f=1MHz See specified Test Circuit VDS=10V, VGS=4.5V, ID=3.5A IS=3.5A, VGS=0V min 20 Value typ 0.4 2.8 54 73 104 260 65 50 6.2 19 30 28 2.8 0.6 0.9 0.85 max 1 ±10 1.3 71 103 156 1.2 Unit V μA μA V S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit VIN 4.5V 0V PW=10μs D.C.≤1% VIN G VDD=10V ID=1.5A RL=6.67Ω D VOUT P.G 50Ω S CPH3456 www.onsemi.com 2 CPH3456 www.onsemi.com 3 CPH3456 www.onsemi.com 4 Package Dimensions CPH3456-TL-H/ CPH3456-TL-W CPH3 CASE 318BA ISSUE O Unit : mm 1 : Gate 2 : Source 3 : Drain CPH3456 Recommended Soldering Footprint 0.6 1.4 2.4 ORDERING INFORMATION Device CPH3456-TL-H CPH3456-TL-W Package CPH3, SC-59 SOT-23, TO-236 Shipping 3,000 pcs. / reel 0.95 0.95 Note Pb-Free and Halogen Free Note on usage : Since the CPH3456 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hol.


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