MCH3382

MCH3382 Power MOSFET –12V, 198mΩ, –2A, Single P-Channel This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features Low On-Resistance 1.2V drive Pb-Free, Halogen Free and RoHS compliance Typical Applications Load Switch SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1, 2) Parameter Symbol Value Unit Drain to Source Voltage VDSS −12 V Gate to Source Voltage VGSS ±9 V Drain Current (DC) ID −2 A Drain Current (Pulse) PW ≤ 10μs, duty cycle ≤ 1% IDP −8 A Power Dissipation When mounted on ceramic substrate (900mm2 × 0.8mm) PD 0.8 W Junction Temperature Tj 150 °C Storage Temperature Tstg −55 to +150 °C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 : This product is designed to “ESD immunity<200V*”, so please take care when handling. *Machine Model THERMAL RESISTANCE RATINGS Parameter Junction to Ambient When mounted on ceramic substrate (900mm2 × 0.8mm) Symbol RθJA Value Unit 156.2 °C/W www.onsemi.com VDSS −12V RDS(on) Max 198mΩ@ −4.5V 297mΩ@ −2.5V 429mΩ@ −1.8V 1040mΩ@ −1.2V ID Max −2A ELECTRICAL CONNECTION P-Channel 3 1 1 : Gate 2 : Source...