Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD UT70P02
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Power MOSFET
DESCRIPTION
The UT70P02 ...
Description
UNISONIC TECHNOLOGIES CO., LTD UT70P02
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Power MOSFET
DESCRIPTION
The UT70P02 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
FEATURES
* RDS(ON) = 6mΩ @VGS = -10 V * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified
SYMBOL
2.Drain
*Pb-free plating product number: UT70P02L
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Normal
Lead Free Plating
UT70P02-TN3-R
UT70P02L-TN3-R
UT70P02-TN3-T
UT70P02L-TN3-T
Package
TO-252 TO-252
Pin Assignment 123 GDS GDS
Packing
Tape Reel Tube
www.unisonic.com.tw Copyright © 2008 Unisonic Technologies Co., Ltd
1 of 5 QW-R502-209.A
UT70P02
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS -25 V
Gate-Source Voltage
VGSS ±20 V
Continuous Drain Current , VGS=4.5V
TC=25°C
ID
-75 A
Pulsed Drain Current (Note 1)
IDM
-350
A
Power Dissipation @ TC=25°C
PD 107 W
Junction Temperature
TJ
+175
W/℃
Strong Temperature
TSTG
-55 ~ +175
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER Junction-to-Ambient Junction-to-Case
SYMBOL
MI...
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