MOSFET. ICE11N65FP Datasheet

ICE11N65FP Datasheet PDF


Part

ICE11N65FP

Description

N-Channel Enhancement Mode MOSFET

Manufacture

Micross Components

Page 4 Pages
Datasheet
Download ICE11N65FP Datasheet


ICE11N65FP Datasheet
ICE11N65FP
N-Channel Enhancement Mode MOSFET
Features:
r Low DS(on)
Ultra Low Gate Charge
High dv/dt Capability
High Unclamped Inductive Switching (UIS) Capability
High Peak Current Capability
Increased Transconductance Performance
Optimized Design For High Performance Power Systems
Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified
Product Summary
ID
V(BR)DSS
rDS(ON)
Qg
TA = 25°C
ID = 250uA
VGS = 10V
VDS = 480V
11A
650V
0.25Ω
59nC
Pin Description:
TO-220
G
Max
Min
Typ
Typ
D
S
Symbol Parameter
Value
Unit Conditions
ID
ID, pulse
EAS
IAR
dv/dt
Continous Drain Current
Pulsed Drain Current
Avalanche Energy, Single Pulse
Avalanche Current, Repetitive
MOSFET dv/dt Ruggedness
VGS
Ptot
Tj, Tstg
Gate Source Voltage
Power Dissipation
Operating and Storage Temperature
Mounting Torque
11
35
460
7.5
50
±20
±30
35
-55 to +150
50
A
A
mJ
A
V/ns
V
W
°C
Ncm
TC = 25°C
TC = 25°C
ID = 7.5A
Limited by Tjmax
VDS = 480V, ID = 11A, Tj = 125°C
Static
AC (f>Hz)
TC = 25°C
M 2.5 screws
Symbol Parameter
Values
Min Typ Max
Unit Conditions
Thermal Characteristics
RthJC Thermal Resistance, Junction to Case
RthJA Thermal Resistance, Junction to Ambient
Tsold Soldering Temperature, Wave Soldering Only
Allowed At Leads
- - 3.5
- - 80
- - 260
Electrical Characteristics @ Tj = 25°C, Unless Otherwise Specified
Static Characteristics
V(BR)DSS
VGS(th)
IDSS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
650 675 -
2.1 3 3.9
- 0.1 1
- - 100
IGSS
RDS(on)
Gate Source Leakage Current
Drain to Source On-State Resistance
- - 100
- 0.25 0.28
- 0.62 -
RGS Gate Resistance
- 4.7 -
°C/W
°C
Leaded
1.6mm (0.063in.) from Case for 10s
V VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
µA VDS = 650V, VGS = 0V, Tj = 25°C
VDS = 650V, VGS = 0V, Tj = 150°C
nA VGS = ±20v, VDS = 0V
VGS = 10V, ID = 5.5A, Tj = 25°C
VGS = 10V, ID = 5.5A, Tj = 150°C
f = 1 MHz, open drain
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: chipcomponents@micross.com
1

ICE11N65FP Datasheet
ICE11N65FP
Symbol Parameter
Dynamic Characteristics
Ciss
Coss
Crss
gfs
td(on)
Tr
td(off )
tf
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Transconductance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Gate Charge Characteristics
Qgs
Qgd
Qg
Vplateau
Gate to Source Charge
Gate to Drain Charge
Gate Charge Total
Gate Plateau Voltage
Reverse Diode
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Irm Peak Reverse Recovery Current
Values
Min Typ Max
Unit Conditions
- 1800 -
- 600 -
-5-
- 15 -
- 39 -
- 10 -
- 55 -
-6-
pF VGS = 0V, VDS = 25V, f = 1 MHz
S VDS = >2*ID* RDS, ID = 5.5A
nS
VDS = 380V, VGS = 10V, ID = 11A, RG = 4Ω
(External)
- 7.1 -
- 14.5 -
- 59 -
- 5.2 -
nC
VDS = 480V, ID = 11A, VGS = 0 to 10V
V
- 0.9 1.2
- 332 -
- 4.4 -
- 25.6 -
V VGS = 0V, IS = IF
ns
µC VRR = 480V, IS = IF, diF/dt = 100 A/µS
A
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: chipcomponents@micross.com
2


Features Datasheet pdf ICE11N65FP N-Channel Enhancement Mode MO SFET Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS ) Capability High Peak Current Capabi lity Increased Transconductance Perfo rmance Optimized Design For High Perf ormance Power Systems Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified Product Summary ID V(BR)DSS rDS(ON) Qg TA = 25°C ID = 250uA VGS = 10V VDS = 480V 11A 650V 0.25Ω 59nC Pin Des cription: TO-220 G Max Min Typ Typ D S Symbol Parameter Value Unit Condi tions ID ID, pulse EAS IAR dv/dt Cont inous Drain Current Pulsed Drain Curren t Avalanche Energy, Single Pulse Avalan che Current, Repetitive MOSFET dv/dt Ru ggedness VGS Ptot Tj, Tstg Gate Sourc e Voltage Power Dissipation Operating a nd Storage Temperature Mounting Torque 11 35 460 7.5 50 ±20 ±30 35 -55 to + 150 50 A A mJ A V/ns V W °C Ncm TC = 25°C TC = 25°C ID = 7.5A Limited by Tjmax VDS = 480V, ID = 11A, Tj = 125°C Static AC (f>Hz) TC = 25°C M 2.5 .
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