ICE11N70 Datasheet PDF


Part Number

ICE11N70

Description

N-Channel Enhancement Mode MOSFET

Manufacture

Micross Components

Total Page 4 Pages
PDF Download
Download ICE11N70 Datasheet PDF


Features Datasheet pdf ICE11N70 N-Channel Enhancement Mode MOSF ET Features: r Low DS(on) Ultra Low G ate Charge High dv/dt Capability Hi gh Unclamped Inductive Switching (UIS) Capability High Peak Current Capabili ty Increased Transconductance Perform ance Optimized Design For High Perfor mance Power Systems Maximum Ratings @ T j = 25°C, Unless Otherwise Specified Product Summary ID V(BR)DSS rDS(ON) Qg TA = 25°C ID = 250uA VGS = 10V VDS = 480V 11A 700V 0.20Ω 85nC Pin Descr iption: G TO-220 Max Min Typ Typ D S Symbol Parameter Value Unit Conditio ns ID ID, pulse EAS IAR dv/dt Contino us Drain Current Pulsed Drain Current A valanche Energy, Single Pulse Avalanche Current, Repetitive MOSFET dv/dt Rugged.
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ICE11N70 Datasheet
ICE11N70
N-Channel Enhancement Mode MOSFET
Features:
r Low DS(on)
Ultra Low Gate Charge
High dv/dt Capability
High Unclamped Inductive Switching (UIS) Capability
High Peak Current Capability
Increased Transconductance Performance
Optimized Design For High Performance Power Systems
Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified
Product Summary
ID
V(BR)DSS
rDS(ON)
Qg
TA = 25°C
ID = 250uA
VGS = 10V
VDS = 480V
11A
700V
0.20Ω
85nC
Pin Description:
G
TO-220
Max
Min
Typ
Typ
D
S
Symbol Parameter
Value
Unit Conditions
ID
ID, pulse
EAS
IAR
dv/dt
Continous Drain Current
Pulsed Drain Current
Avalanche Energy, Single Pulse
Avalanche Current, Repetitive
MOSFET dv/dt Ruggedness
VGS
Ptot
Tj, Tstg
Gate Source Voltage
Power Dissipation
Operating and Storage Temperature
Mounting Torque
11
33
280
7.5
50
±20
±30
108
-55 to +150
60
A
A
mJ
A
V/ns
V
W
°C
Ncm
TC = 25°C
TC = 25°C
ID = 7.5A
Limited by Tjmax
VDS = 480V, ID = 11A, Tj = 125°C
Static
AC (f>Hz)
TC = 25°C
M 3 & 3.5 screws
Symbol Parameter
Values
Min Typ Max
Unit Conditions
Thermal Characteristics
RthJC Thermal Resistance, Junction to Case
RthJA Thermal Resistance, Junction to Ambient
Tsold Soldering Temperature, Wave Soldering Only
Allowed At Leads
- - 0.6
- - 62
- - 260
Electrical Characteristics @ Tj = 25°C, Unless Otherwise Specified
Static Characteristics
V(BR)DSS
VGS(th)
IDSS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
700 740 -
2.5 3 3.5
- 0.1 1
- - 100
IGSS
RDS(on)
Gate Source Leakage Current
Drain to Source On-State Resistance
- - 100
- 0.20 0.25
- 0.53 -
RGS Gate Resistance
- 4.3 -
°C/W
°C
Leaded
1.6mm (0.063in.) from Case for 10s
V VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
µA VDS = 700V, VGS = 0V, Tj = 25°C
VDS = 700V, VGS = 0V, Tj = 150°C
nA VGS = ±20v, VDS = 0V
VGS = 10V, ID = 5.5A, Tj = 25°C
VGS = 10V, ID = 5.5A, Tj = 150°C
f = 1 MHz, open drain
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: chipcomponents@micross.com
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