ICE15N60FP Datasheet PDF


Part Number

ICE15N60FP

Description

N-Channel Enhancement Mode MOSFET

Manufacture

Micross Components

Total Page 4 Pages
PDF Download
Download ICE15N60FP Datasheet PDF


Features Datasheet pdf ICE15N60FP N-Channel Enhancement Mode MO SFET Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS ) Capability High Peak Current Capabi lity Increased Transconductance Perfo rmance Optimized Design For High Perf ormance Power Systems Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified Product Summary ID V(BR)DSS rDS(ON) Qg TA = 25°C ID = 250uA VGS = 10V VDS = 480V 15A 600V 0.23Ω 59nC Pin Des cription: TO-220 G Max Min Typ Typ D S Symbol Parameter Value Unit Condi tions ID ID, pulse EAS IAR dv/dt Cont inous Drain Current Pulsed Drain Curren t Avalanche Energy, Single Pulse Avalan che Current, Repetitive MOSFET dv/dt Rug.
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ICE15N60FP Datasheet
ICE15N60FP
N-Channel Enhancement Mode MOSFET
Features:
r Low DS(on)
Ultra Low Gate Charge
High dv/dt Capability
High Unclamped Inductive Switching (UIS) Capability
High Peak Current Capability
Increased Transconductance Performance
Optimized Design For High Performance Power Systems
Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified
Product Summary
ID
V(BR)DSS
rDS(ON)
Qg
TA = 25°C
ID = 250uA
VGS = 10V
VDS = 480V
15A
600V
0.23Ω
59nC
Pin Description:
TO-220
G
Max
Min
Typ
Typ
D
S
Symbol Parameter
Value
Unit Conditions
ID
ID, pulse
EAS
IAR
dv/dt
Continous Drain Current
Pulsed Drain Current
Avalanche Energy, Single Pulse
Avalanche Current, Repetitive
MOSFET dv/dt Ruggedness
VGS
Ptot
Tj, Tstg
Gate Source Voltage
Power Dissipation
Operating and Storage Temperature
Mounting Torque
15
45
460
7.5
50
±20
±30
35
-55 to +150
50
A
A
mJ
A
V/ns
V
W
°C
Ncm
TC = 25°C
TC = 25°C
ID = 7.5A
Limited by Tjmax
VDS = 480V, ID = 15A, Tj = 125°C
Static
AC (f>Hz)
TC = 25°C
M 2.5 screws
Symbol Parameter
Values
Min Typ Max
Unit Conditions
Thermal Characteristics
RthJC Thermal Resistance, Junction to Case
RthJA Thermal Resistance, Junction to Ambient
Tsold Soldering Temperature, Wave Soldering Only
Allowed At Leads
- - 3.5
- - 80
- - 260
Electrical Characteristics @ Tj = 25°C, Unless Otherwise Specified
Static Characteristics
V(BR)DSS
VGS(th)
IDSS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
600 640 -
2.1 3 3.9
- 0.1 1
- - 100
IGSS
RDS(on)
Gate Source Leakage Current
Drain to Source On-State Resistance
- - 100
- 0.23 0.25
- 0.57 -
RGS Gate Resistance
- 4.7 -
°C/W
°C
Leaded
1.6mm (0.063in.) from Case for 10s
V VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
µA VDS = 600V, VGS = 0V, Tj = 25°C
VDS = 600V, VGS = 0V, Tj = 150°C
nA VGS = ±20v, VDS = 0V
VGS = 10V, ID = 7.5A, Tj = 25°C
VGS = 10V, ID = 7.5A, Tj = 150°C
f = 1 MHz, open drain
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: chipcomponents@micross.com
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