ICE15N73

Preliminary Data Sheet ICE15N73 ICE15N73 N-Channel Enhancement Mode MOSFET ID V(BR)DSS Product Summary TA=25oC ID=250uA 15A 730V Max Min rDS(on) VGS=10V 0.25Ω Typ Features Low rDS(on) Ultra Low Gate Charge Qg VDS=480V 82nC D Typ High dv/dt capability High Unclamped Inductive Switching (UIS) capability High peak current capability Increased transconductance performance G Optimized design for high performance power systems S T0220 ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20 YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE. Standard Metal Heatsink 1=Gate, 2=Drain, 3=Source. Maximum ratings b , at Tj=25oC, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current Avalanche energy, single pulse ID ID, pulse E AS Tc=25oC Tc=25oC ID=7.5A Avalanche current, repetitive I AR limited by Tjmax MOSFET dv/dt ruggedness dv/dt VDS=480V, ID=15A, Tj=125oC Gate source voltage static VGS AC (f>1Hz) Power dissipation Operating and storage temperature Mounting torque Ptot Tj, Tstg Tc=25°C M 3 & 3.5 screws a When mounted on 1inch square 2oz copper clad FR-4 b Preliminary Data Sheet – Specifications subject to change Value 15 35 280 7.5 50 ±20 ±30 208 -55 to +150 60 Unit A A mJ A V/ns V W oC Ncm SP-15N73-000-3 04/16/2013 1 Preliminary Data Sheet ICE...