Mode MOSFET. ICE15N73FP Datasheet

ICE15N73FP Datasheet PDF, Equivalent


Part Number

ICE15N73FP

Description

N-Channel Enhancement Mode MOSFET

Manufacture

Icemos

Total Page 9 Pages
PDF Download
Download ICE15N73FP Datasheet PDF


ICE15N73FP Datasheet
Preliminary Data Sheet
ICE15N73FP
ICE15N73FP N-Channel
Enhancement Mode MOSFET
Features
• Low rDS(on)
• Ultra Low Gate Charge
• High dv/dt capability
• High Unclamped Inductive Switching (UIS) capability
• High peak current capability
• Increased transconductance performance
• Optimized design for high performance power systems
HALOGEN
FREE
ID
V(BR)DSS
rDS(on)
Qg
Product Summary
TA=25oC
ID=250uA
VGS=10V
VDS=480V
15A
730V
0.25Ω
82nC
D
G
S
Max
Min
Typ
Typ
ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS
FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20
YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN
USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
Maximum ratings b , at Tj=25oC, unless otherwise specified
T0220 Full-PAK
Isolated (T0-220)
1=Gate, 2=Drain,
3=Source
Parameter
Symbol
Conditions
Value
Unit
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
ID
ID, pulse
E AS
Tc=25oC
Tc=25oC
ID=7.5A
15 A
35 A
280 mJ
Avalanche current, repetitive
I AR limited by Tjmax 7.5 A
MOSFET dv/dt ruggedness
dv/dt
VDS=480V, ID=15A,
Tj=125oC
50
V/ns
Gate source voltage
static
VGS
AC (f>1Hz)
±20
±30
V
Power dissipation
Operating and storage temperature
Mounting torque
Ptot
Tj, Tstg
Tc=25°C
M 2.5 screws
65
-55 to +150
50
W
oC
Ncm
a When mounted on 1inch square 2oz copper clad FR-4
b Preliminary Data Sheet Specifications subject to change
SP-15N73FP-000-0
08/07/2013
1

ICE15N73FP Datasheet
Preliminary Data Sheet
ICE15N73FP
Parameter
Symbol
Conditions
Thermal characteristics
Thermal resistance, junction-
case a
RthJC
Thermal resistance, junction-
ambient a
RthJA
Soldering temperature, wave
soldering only allowed at leads
T sold
leaded
1.6mm (0.063in.) from
case for 10 s
Values
Unit
Min Typ Max
- - 3.5
oC/W
- - 68
- - 260 oC
Electrical characteristics b , at Tj=25oC, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS
Gate threshold voltage
VGS(th)
Zero gate voltage drain current IDSS
Gate source leakage current
Drain-source
on-state resistance
IGSS
RDS (on)
VGS=0 V, ID=250µA
VDS=VGS, ID=250µA
VDS=730V, VGS=0V,
Tj=25oC
VDS=730V, VGS=0V,
Tj=150oC
VGS=±20 V, VDS=0V
VGS=10V, ID=7.5A,
Tj=25oC
VGS=10V, ID=7.5A,
Tj=150oC
730
2.5
-
-
-
-
-
Gate resistance
RG f=1 MHZ, open drain
-
760 -
3 3.5
0.5 5
20 -
- 100
0.25 0.35
0.7 -
4-
V
µA
nA
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Transconductance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Ciss
Coss
Crss
gfs
td(on)
tr
td(off)
tf
VGS=0 V, VDS=25 V,
f=1 MHz
VDS>2*ID*RDS, ID=7.5A
VDS=480V, VGS=10V,
ID=15A, RG=4(External)
-
-
-
-
-
-
-
-
2650
943
8
20
10
5
67
4.5
-
-
-
-
-
-
-
-
pF
S
ns
SP-15N73FP-000-0
08/07/2013
2


Features Datasheet pdf Preliminary Data Sheet ICE15N73FP ICE15 N73FP N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability • High peak current capability • Increased transconductan ce performance • Optimized design for high performance power systems HALOGE N FREE ID V(BR)DSS rDS(on) Qg Product Summary TA=25oC ID=250uA VGS=10V VDS= 480V 15A 730V 0.25Ω 82nC D G S Max Min Typ Typ ICEMOS AND ITS SISTER COM PANY 3D SEMI OWN THE FUNDAMENTAL PATENT S FOR SUPERJUNCTION MOSFETS. THE MAJORI TY OF THESE PATENTS HAVE 17 to 20 YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN USA, CHINA, K OREA, JAPAN, TAIWAN & EUROPE. Maximum r atings b , at Tj=25oC, unless otherwise specified T0220 Full-PAK Isolated (T0 -220) 1=Gate, 2=Drain, 3=Source Parame ter Symbol Conditions Value Unit C ontinuous drain current Pulsed drain cu rrent Avalanche energy, single pulse ID ID, pulse E AS Tc=25oC Tc=25oC ID=7..
Keywords ICE15N73FP, datasheet, pdf, Icemos, N-Channel, Enhancement, Mode, MOSFET, CE15N73FP, E15N73FP, 15N73FP, ICE15N73F, ICE15N73, ICE15N7, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)