MOSFET. ICE20N170 Datasheet

ICE20N170 Datasheet PDF


Part

ICE20N170

Description

N-Channel Enhancement Mode MOSFET

Manufacture

Micross Components

Page 4 Pages
Datasheet
Download ICE20N170 Datasheet


ICE20N170 Datasheet
ICE20N170
N-Channel Enhancement Mode MOSFET
Features:
r Low DS(on)
Ultra Low Gate Charge
High dv/dt Capability
High Unclamped Inductive Switching (UIS) Capability
High Peak Current Capability
Increased Transconductance Performance
Optimized Design For High Performance Power Systems
Product Summary
ID
V(BR)DSS
rDS(ON)
Qg
TA = 25°C
ID = 250uA
VGS = 10V
VDS = 480V
20A
600V
0.17Ω
62nC
Pin Description:
TO-220
G
Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified
Symbol Parameter
Value
Unit Conditions
ID
ID, pulse
EAS
IAR
dv/dt
Continous Drain Current
Pulsed Drain Current
Avalanche Energy, Single Pulse
Avalanche Current, Repetitive
MOSFET dv/dt Ruggedness
VGS
Ptot
Tj, Tstg
Gate Source Voltage
Power Dissipation
Operating and Storage Temperature
Mounting Torque
20
62
520
20
50
±20
±30
180
-55 to +150
60
A
A
mJ
A
V/ns
V
W
°C
Ncm
TC = 25°C
TC = 25°C
ID = 10A
Limited by Tjmax
VDS = 480V, ID = 20A, Tj = 125°C
Static
AC (f>Hz)
TC = 25°C
M 2.5 screws
Max
Min
Typ
Typ
D
S
Symbol Parameter
Values
Min Typ Max
Unit Conditions
Thermal Characteristics
RthJC Thermal Resistance, Junction to Case
RthJA Thermal Resistance, Junction to Ambient
Tsold Soldering Temperature, Wave Soldering Only
Allowed At Leads
-
-
-
Electrical Characteristics @ Tj = 25°C, Unless Otherwise Specified
Static Characteristics
V(BR)DSS
VGS(th)
IDSS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
600
2.1
-
-
IGSS
RDS(on)
Gate Source Leakage Current
Drain to Source On-State Resistance
-
-
-
RGS Gate Resistance
-
- 0.7
- 62
- 260
640 -
3 3.9
0.1 1
- 100
- 100
0.17 0.199
0.52 -
4.3 -
°C/W
°C
Leaded
1.6mm (0.063in.) from Case for 10s
V VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
µA VDS = 600V, VGS = 0V, Tj = 25°C
VDS = 600V, VGS = 0V, Tj = 150°C
nA VGS = ±20v, VDS = 0V
VGS = 10V, ID = 10A, Tj = 25°C
VGS = 10V, ID = 10A, Tj = 150°C
f = 1 MHz, open drain
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: chipcomponents@micross.com
1

ICE20N170 Datasheet
ICE20N170
Symbol Parameter
Dynamic Characteristics
Ciss
Coss
Crss
gfs
td(on)
Tr
td(off )
tf
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Transconductance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Gate Charge Characteristics
Qgs
Qgd
Qg
Vplateau
Gate to Source Charge
Gate to Drain Charge
Gate Charge Total
Gate Plateau Voltage
Reverse Diode
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Irm Peak Reverse Recovery Current
Values
Min Typ Max
Unit Conditions
- 2020 -
- 980 -
-9-
- 19 -
- 39 -
- 3.5 -
- 55 -
-7-
pF VGS = 0V, VDS = 25V, f = 1 MHz
S VDS = >2*ID* RDS, ID = 10A
nS
VDS = 480V, VGS = 10V, ID = 20A, RG = 4Ω
(External)
- 13 -
- 23 -
- 62 -
- 5.8 -
nC
VDS = 480V, ID = 20A, VGS = 10V
V
- 0.9 1.2
- 407 -
- 6.7 -
- 32 -
V VGS = 0V, IS = IF
ns
µC VRR = 480V, IS = IF, diF/dt = 100 A/µS
A
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: chipcomponents@micross.com
2


Features Datasheet pdf ICE20N170 N-Channel Enhancement Mode MOS FET Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability H igh Unclamped Inductive Switching (UIS) Capability High Peak Current Capabil ity Increased Transconductance Perfor mance Optimized Design For High Perfo rmance Power Systems Product Summary ID V(BR)DSS rDS(ON) Qg TA = 25°C ID = 250uA VGS = 10V VDS = 480V 20A 600V 0 .17Ω 62nC Pin Description: TO-220 G Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified Symbol Parameter Value Unit Conditions ID ID, pulse E AS IAR dv/dt Continous Drain Current P ulsed Drain Current Avalanche Energy, S ingle Pulse Avalanche Current, Repetiti ve MOSFET dv/dt Ruggedness VGS Ptot Tj , Tstg Gate Source Voltage Power Dissi pation Operating and Storage Temperatur e Mounting Torque 20 62 520 20 50 ±20 ±30 180 -55 to +150 60 A A mJ A V/ns V W °C Ncm TC = 25°C TC = 25°C ID = 10A Limited by Tjmax VDS = 480V, ID = 20A, Tj = 125°C Static AC (f>Hz) TC = 25°C M 2.5 screws Max Min Typ Ty.
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