ICE20N170B Datasheet PDF


Part Number

ICE20N170B

Description

N-Channel Enhancement Mode MOSFET

Manufacture

Micross Components

Total Page 4 Pages
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Download ICE20N170B Datasheet PDF


Features Datasheet pdf ICE20N170B N-Channel Enhancement Mode MO SFET Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS ) Capability High Peak Current Capabi lity Increased Transconductance Perfo rmance Optimized Design For High Perf ormance Power Systems Product Summary ID V(BR)DSS rDS(ON) Qg TA = 25°C ID = 250uA VGS = 10V VDS = 480V 20A 600V 0.17Ω 62nC Pin Description: TO-263 G Maximum Ratings @ Tj = 25°C, Unles s Otherwise Specified Symbol Parameter Value Unit Conditions ID ID, pulse EAS IAR dv/dt Continous Drain Current Pulsed Drain Current Avalanche Energy, Single Pulse Avalanche Current, Repetit ive MOSFET dv/dt Ruggedness VGS Ptot Tj.
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ICE20N170B Datasheet
ICE20N170B
N-Channel Enhancement Mode MOSFET
Features:
r Low DS(on)
Ultra Low Gate Charge
High dv/dt Capability
High Unclamped Inductive Switching (UIS) Capability
High Peak Current Capability
Increased Transconductance Performance
Optimized Design For High Performance Power Systems
Product Summary
ID
V(BR)DSS
rDS(ON)
Qg
TA = 25°C
ID = 250uA
VGS = 10V
VDS = 480V
20A
600V
0.17Ω
62nC
Pin Description:
TO-263
G
Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified
Symbol Parameter
Value
Unit Conditions
ID
ID, pulse
EAS
IAR
dv/dt
Continous Drain Current
Pulsed Drain Current
Avalanche Energy, Single Pulse
Avalanche Current, Repetitive
MOSFET dv/dt Ruggedness
VGS
Ptot
Tj, Tstg
Gate Source Voltage
Power Dissipation
Operating and Storage Temperature
20
62
520
20
50
±20
±30
208
-55 to +150
A TC = 25°C
A TC = 25°C
mJ ID = 8.5A
A Limited by Tjmax
V/ns VDS = 480V, ID = 17A, Tj = 125°C
Static
V
AC (f>Hz)
W TC = 25°C
°C
Max
Min
Typ
Typ
D
S
Symbol Parameter
Values
Min Typ Max
Thermal Characteristics
RthJC Thermal Resistance, Junction to Case
RthJA Thermal Resistance, Junction to Ambient
Tsold Soldering Temperature, Wave Soldering Only
Allowed At Leads
-
-
-
Electrical Characteristics @ Tj = 25°C, Unless Otherwise Specified
Static Characteristics
V(BR)DSS
VGS(th)
IDSS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
600
2.1
-
-
IGSS
RDS(on)
Gate Source Leakage Current
Drain to Source On-State Resistance
-
-
-
RGS Gate Resistance
-
- 0.7
- 62
- 260
640 -
3 3.9
0.1 1
- 100
- 100
0.17 0.199
0.52 -
4.3 -
Unit Conditions
°C/W
°C
Leaded
1.6mm (0.063in.) from Case for 10s
V VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
µA VDS = 600V, VGS = 0V, Tj = 25°C
VDS = 600V, VGS = 0V, Tj = 150°C
nA VGS = ±20v, VDS = 0V
VGS = 10V, ID = 10A, Tj = 25°C
VGS = 10V, ID = 10A, Tj = 150°C
f = 1 MHz, open drain
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: chipcomponents@micross.com
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