ST3413A
P Channel Enhancement Mode MOSFET
-3.5A
DESCRIPTION
ST3413A is the P-Channel logic enhancement mode power fiel...
ST3413A
P Channel Enhancement Mode MOSFET
-3.5A
DESCRIPTION
ST3413A is the P-Channel logic enhancement mode power field effect
transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package.
PIN CONFIGURATION SOT-23
3 D GS
12
1.Gate 2.Source 3.Drain PART MARKING SOT-23
FEATURE
-20V/-3.4A, RDS(ON) = 70mΩ (Typ.) @VGS = -4.5V
-20V/-2.4A, RDS(ON) = 80mΩ @VGS = -2.5V
-20V/-1.7A, RDS(ON) = 125mΩ @VGS = -1.8V
Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design
3
13YA
12 Y: Year Code A: Week Code
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
ST3413A 2006 V1
ST3413A
P Channel Enhancement Mode MOSFET
-3.5A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Symbol Typical
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current
TA=25℃ TA=70℃
VDSS VGSS
ID IDM
-20
±8 -3.5 -2.8 -15
Continuous Source Current (Diode Conduction)
Power Dissipation
TA=25℃ TA=70℃
Operation Junction Temperature
IS -1.4
PD
1.25 0.8
TJ -55/150
Storage Te...