STC4539
N&P Pair Enhancement Mode MOSFET
6.8A / -6.2A
DESCRIPTION
The STC4539 is the N & P-Channel enhancement mode pow...
STC4539
N&P Pair Enhancement Mode MOSFET
6.8A / -6.2A
DESCRIPTION
The STC4539 is the N & P-Channel enhancement mode power field effect
transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application such as notebook computer power management and other battery powered circuits, where high-side switching, low in-line power loss and resistance to transient are needed.
PIN CONFIGURATION SOP-8
PART MARKING SOP-8
FEATURE
N-Channel z 30V/6.8A, RDS(ON) = 34mΩ
@VGS = 10V z 30V/5.6A, RDS(ON) = 46mΩ
@VGS = 4.5V P-Channel z -30V/-6.2A, RDS(ON) = 60mΩ
@VGS = -10V z -30V/-4.6A, RDS(ON)= 80mΩ
@VGS = - 4.5V z Super high density cell design for
extremely low RDS(ON) z Exceptional on-resistance and maximum
DC current capability z SOP-8 package
ORDERING INFORMATION
Part Number
Package
Part Marking
STC4539S8RG
SOP-8
STC4539
STC4539S8TG
SOP-8
STC4539
※ Process Code : A ~ Z ; a ~ z ※ STC4539S8RG S8 : SOP-8 ; R : Tape Reel ; G : Pb – Free ※ STC4539S8TG S8 : SOP-8 ; T : Tube ; G : Pb – Free
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
Copyright © 2007, Stanson Corp.
STC4539 2007. V1
STC4539
N&P Pair Enhancement Mode MOSFET
6.8A / -6.2A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
...