STN1012

STN1012 Dual N Channel Enhancement Mode MOSFET 0.65A DESCRIPTION STN1012 is the N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other bettery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed. PIN CONFIGURATION SOT-523 / SC-89 FEATURE � 20V/0.65A, RDS(ON) =380ohm@VGS =4.5V � 20V/0.55A, RDS(ON) =450ohm@VGS =2.5V � 20V/0.45A, RDS(ON) =800ohm@VGS =1.8V � Super high density cell design for extremely low RDS(ON) � Exceptional low on-resistance and maximum DC current capability � SOT-523 / SC89 package design PART MARKING STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STN1012 2009. V1 STN1012 Dual N Channel Enhancement Mode MOSFET 0.65A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage Gate-Source Voltage TA=25℃ Continuous Drain Current (TJ=150℃) TA=80℃ Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature Storage Temperature Range VDSS VGSS ID IDM IS PD TJ TSTG 20 +/-12 0.65 0.45 1.0 0.3 0.27 0.16 -55/150 -55/150 V V...