Document
STN1304
N Channel Enhancement Mode MOSFET
2.0A
DESCRIPTION STN1304 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package.
PIN CONFIGURATION SOT-323
3 D GS 12
1.Gate 2.Source 3.Drain PART MARKING SOT-323
FEATURE
20V/2.0A, RDS(ON) = 225mΩ @VGS = 4.5V
20V/1.5A, RDS(ON) = 315mΩ @VGS = 2.5V
20V/1.0A, RDS(ON) = 425mΩ @VGS = 4.5V
Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-323 package design
3
04YA
12 Y: Year Code A: Process Code
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
STN1304 2005. V1
STN1304
N Channel Enhancement Mode MOSFET
2.0A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Symbol Typical
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain CurrentTJ=150℃)
TA=25℃ TA=70℃
Pulsed Drain Current
VDSS VGSS
ID IDM
20
±12 2.0 1.5 10
V V A A
Continuous Source Current (Diode Conduction)
Power Dissipation
TA=25℃ TA=70℃
Operation Junction Temperature
Storgae Temperature Range
Thermal Resistance-Junction to Ambient
IS PD TJ TSTG RθJA
1.6 1.25 0.8 150
-55/150
105
A W ℃ ℃ ℃/W
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
STN1304 2005. V1
STN1304
N Channel Enhancement Mode MOSFET
2.0A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static Drain-Source Breakdown Voltage Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
Drain-source On-Resistance
Forward Transconductance
Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
V(BR)DSS VGS(th)
IGSS
IDSS
RDS(on)
gfs VSD
Qg Qgs Qgd Ciss Coss Crss td(on)
tr
td(off)
tf
VGS=0V,ID=250uA 20
V
VDS=VGS,ID=250uA 0.35
1.0 V
VDS=0V,VGS=±12V
VDS=20V,VGS=0V
VDS=20V,VGS=0V TJ=55℃
VGS=4.5V,ID=2.0A VGS=2.5V,ID=1.5A VGS=1.8V,ID=1.0A
VDS=10V,ID=1.2A
±100 nA
1
5 uA
0.150 0.225 0.210 0.315 Ω 0.320 0.425
10 S
IS=0.5A,VGS=0V
0.80 1.2 V
VDS=10V VGS=4.5V ID≡0.7A
VDS=10V VGS=0V F=1MHz
VDD=10V RL=10Ω ID=1.0A VGEN=4.5V RG=6Ω
1.2 1.5 0.2 0.3 110 34
16
nC pF
5 10
8 15 nS
10 18
1.2 2.8
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
STN1304 2005. V1
STN1304
N Channel Enhancement Mode MOSFET
2.0A
TYPICAL CHARACTERICTICS (25℃ Unless noted)
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
STN1304 2005. V1
STN1304
N Channel Enhancement Mode MOSFET
2.0A
TYPICAL CHARACTERICTICS (25℃ Unless noted)
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
STN1304 2005. V1
SOT-323 PACKAGE OUTLINE
STN1304
N Channel Enhancement Mode MOSFET
2.0A
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
STN1304 2005. V1
.