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STN1304 Dataheets PDF



Part Number STN1304
Manufacturers Stanson Technology
Logo Stanson Technology
Description MOSFET
Datasheet STN1304 DatasheetSTN1304 Datasheet (PDF)

STN1304 N Channel Enhancement Mode MOSFET 2.0A DESCRIPTION STN1304 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product i.

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STN1304 N Channel Enhancement Mode MOSFET 2.0A DESCRIPTION STN1304 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-323 3 D GS 12 1.Gate 2.Source 3.Drain PART MARKING SOT-323 FEATURE 20V/2.0A, RDS(ON) = 225mΩ @VGS = 4.5V 20V/1.5A, RDS(ON) = 315mΩ @VGS = 2.5V 20V/1.0A, RDS(ON) = 425mΩ @VGS = 4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-323 package design 3 04YA 12 Y: Year Code A: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com STN1304 2005. V1 STN1304 N Channel Enhancement Mode MOSFET 2.0A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain CurrentTJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current VDSS VGSS ID IDM 20 ±12 2.0 1.5 10 V V A A Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction to Ambient IS PD TJ TSTG RθJA 1.6 1.25 0.8 150 -55/150 105 A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com STN1304 2005. V1 STN1304 N Channel Enhancement Mode MOSFET 2.0A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current Drain-source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time V(BR)DSS VGS(th) IGSS IDSS RDS(on) gfs VSD Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VGS=0V,ID=250uA 20 V VDS=VGS,ID=250uA 0.35 1.0 V VDS=0V,VGS=±12V VDS=20V,VGS=0V VDS=20V,VGS=0V TJ=55℃ VGS=4.5V,ID=2.0A VGS=2.5V,ID=1.5A VGS=1.8V,ID=1.0A VDS=10V,ID=1.2A ±100 nA 1 5 uA 0.150 0.225 0.210 0.315 Ω 0.320 0.425 10 S IS=0.5A,VGS=0V 0.80 1.2 V VDS=10V VGS=4.5V ID≡0.7A VDS=10V VGS=0V F=1MHz VDD=10V RL=10Ω ID=1.0A VGEN=4.5V RG=6Ω 1.2 1.5 0.2 0.3 110 34 16 nC pF 5 10 8 15 nS 10 18 1.2 2.8 STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com STN1304 2005. V1 STN1304 N Channel Enhancement Mode MOSFET 2.0A TYPICAL CHARACTERICTICS (25℃ Unless noted) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com STN1304 2005. V1 STN1304 N Channel Enhancement Mode MOSFET 2.0A TYPICAL CHARACTERICTICS (25℃ Unless noted) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com STN1304 2005. V1 SOT-323 PACKAGE OUTLINE STN1304 N Channel Enhancement Mode MOSFET 2.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com STN1304 2005. V1 .


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