STN80T08

STN80T08 N Channel Enhancement Mode MOSFET 80.0A DESCRIPTION STN80T08 is used trench technology to provide excellent RDS(on) and gate charge. Those devices are suitable for use as load switch or in PWM applications. PIN CONFIGURATION TO220-3L FEATURE 80V/40.0A, RDS(ON) = 8mΩ (Typ.) @VGS = 10V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability TO-220 package design STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2009, Stanson Corp. STN80T08 2011. V1 STN80T08 N Channel Enhancement Mode MOSFET 80.0A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current Avalanche Current Symbol VDSS TA=25℃ TA=70℃ VGSS ID IDM IAS Typical 80 ±25 80.0 300.0 370 80 Unit V V A A A Power Dissipation TA=25℃ PD 200 W Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction to Ambient TJ TSTG RθJA 175 -55/175 0.75 ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2009, Stanson Corp. STN80T08 2011. V1 STN80T08 N Channel Enhancement Mode MOSFET 80.0A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current D...