STN8822
Dual N Channel Enhancement Mode MOSFET
8.0A
DESCRIPTION
STN8822 is the dual N-Channel enhancement mode power f...
STN8822
Dual N Channel Enhancement Mode MOSFET
8.0A
DESCRIPTION
STN8822 is the dual N-Channel enhancement mode power field effect
transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as notebook computer power management and other battery powered circuits, where high-side switching is required.
PIN CONFIGURATION TSSOP-8
FEATURE
20V/8.0A, RDS(ON) = 20m-ohm (Typ.) @VGS =4.5V
20V/7.0A, RDS(ON) =24m-ohm @VGS =2.5V
20V/3.0A, RDS(ON) =32m-ohm @VGS =1.8V
Super high density cell design for extremely low RDS(ON) Exceptional low on-resistance and maximum DC current capability TSSOP-8 package design
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com
STN8822 2009. V1
STN8822
Dual N Channel Enhancement Mode MOSFET
8.0A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ unless otherwise noted )
Parameter
Symbol
Typical
Unit
Drain-Source Voltage Gate-Source Voltage
VDSS VGSS
20 +/-12
V V
Continuous Drain Current (TJ=150℃)
TA=25℃ TA=70℃
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
TA=25℃ TA=70℃
Operation Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
ID
IDM IS
PD TJ TSTG RθJA
7.4
6.0 30 1.5 2.0
1.2 -40/140 -55/150
105
A
A A
W ℃ ℃ ℃/W
STANSON TECHNOLOGY 120 Bentley Square, Mountain Vie...