STP1013

STP1013 Dual P Channel Enhancement Mode MOSFET -0.45A DESCRIPTION STP1013 is the P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other bettery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed. PIN CONFIGURATION SOT-523 / SC-89 FEATURE -20V/-0.45A, RDS(ON) =520ohm @VGS =-4.5V -20V/-0.35A, RDS(ON) =700ohm @VGS =-2.5V -20V/-0.25A, RDS(ON) =950ohm @VGS =-1.8V Super high density cell design for extremely low RDS(ON) Exceptional low on-resistance and maximum DC current capability SOT-523 / SC89 package design PART MARKING STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STP1013 2009. V1 STP1013 Dual P Channel Enhancement Mode MOSFET -0.45A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current TA=25℃ TA=80℃ Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature Storage Temperature Range VDSS VGSS ID IDM IS PD TJ TSTG -20 ±12 -0.45 -0.35 -1.0 -0.3 0.27 0.16 -55/150 -55/150...