STP3055L2

S T P /B 3055L2 S amHop Microelectronics C orp. Nov 23, 2004 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y VDS S 20V ID R DS (ON) ( m W ) Max 40 @ VGS = 4.5V 18A 60 @ VGS = 2.5V F E AT UR E S S uper high dense cell design for low R DS(ON). R ugged and reliable. TO-220 and TO-263 P ackage. D D GS S TB S E R IE S T O -263(DD-P AK ) G D S S TP S E R IE S TO-220 G S ABS OLUTE MAXIMUM R ATINGS (TC=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ TJ=25 C -P ulsed a Drain-S ource Diode Forward C urrent Maximum P ower Dissipation @ Tc=25 C Operating and S torage Temperature R ange THE R MAL CHAR ACTE R IS TICS Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient S ymbol VDS VGS ID IDM IS PD TJ, TSTG R JC R JA Limit 20 12 18 45 15 50 -55 to 175 3 50 Unit V V A A A W C C /W C /W 1 S T P /B 3055L2 E LE CTR ICAL CHAR ACTE R IS TICS (TA =25 C unless otherwise noted) P a ra meter S ymbol Condition OFF CHARACTERISTICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS b Gate Threshold Voltage BVDSS VGS =0V, ID =250uA IDSS VDS =16V, VGS =0V IGSS VGS = 12V, VDS = 0V VGS(th) VDS =VGS, ID = 250uA Drain-S ource On-S tate R esistance R DS(ON) VGS =4.5V, ID= 6.0A VGS =2.5V, ID= 5.2A On-S tate Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS c ID(ON) gFS VDS = 5V, VGS = 4.5V VDS...