STP3467ST6RG

STP3467 P Channel Enhancement Mode MOSFET -5.2A DESCRIPTION The STP3467 is the P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION TSOP-6P D SD FEATURE ◆ -20V/-5.0A, RDS(ON)=90mohm@VGS=-4.5V ◆ -20V/-3.5A, RDS(ON)=110mohm@VGS=-2.5V ◆ -20V/-1.7A, RDS(ON)=140mohm@VGS=-1.8V 67YW D DG Y: Year A: Week Code ◆ Super high density cell design for extremely low RDS(ON) ◆ Exceptional an-resistance and maximum DC current capability ◆ TSOP-6P package design ORDERING INFORMATION Part Number Package Part Marking STP3467ST6RG TSOP-6 67YW ※ Week Code Code : A ~ Z ; a ~ z ※ STP3467ST6RG ST6 : TSOP-6; R: Tape Reel ; G: Pb – Free STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STP3467 2008. V1 STP3467 P Channel Enhancement Mode MOSFET -5.2A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±12 V Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current ID IDM -5.2 -4.2 -20 A A Continuous Source Cu...