STP3467
P Channel Enhancement Mode MOSFET
-5.2A
DESCRIPTION The STP3467 is the P-Channel enhancement mode power field e...
STP3467
P Channel Enhancement Mode MOSFET
-5.2A
DESCRIPTION The STP3467 is the P-Channel enhancement mode power field effect
transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION TSOP-6P
D SD
FEATURE
◆ -20V/-5.0A, RDS(ON)=90mohm@VGS=-4.5V ◆ -20V/-3.5A, RDS(ON)=110mohm@VGS=-2.5V ◆ -20V/-1.7A, RDS(ON)=140mohm@VGS=-1.8V
67YW
D DG Y: Year A: Week Code
◆ Super high density cell design for extremely low
RDS(ON) ◆ Exceptional an-resistance and maximum DC
current capability ◆ TSOP-6P package design
ORDERING INFORMATION
Part Number
Package
Part Marking
STP3467ST6RG
TSOP-6
67YW
※ Week Code Code : A ~ Z ; a ~ z ※ STP3467ST6RG ST6 : TSOP-6; R: Tape Reel ; G: Pb – Free
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com
STP3467 2008. V1
STP3467
P Channel Enhancement Mode MOSFET
-5.2A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ unless otherwise noted )
Parameter
Symbol
Typical
Unit
Drain-Source Voltage
VDSS
-20
V
Gate-Source Voltage
VGSS
±12
V
Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃
Pulsed Drain Current
ID IDM
-5.2 -4.2 -20
A A
Continuous Source Cu...