STP607D
P Channel Enhancement Mode MOSFET
-10.0A
DESCRIPTION
STP607D is the P-Channel logic enhancement mode power field...
STP607D
P Channel Enhancement Mode MOSFET
-10.0A
DESCRIPTION
STP607D is the P-Channel logic enhancement mode power field effect
transistor which is produced using high cell density, DMOS trench technology. The STP607D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
PIN CONFIGURATION (D-PAK)
TO-252
TO-251
FEATURE
-60V/-10.0A, RDS(ON) = 150mΩ(Typ.) @VGS = -10V
Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability TO-252package design
PART MARKING
Y: Year Code A: Date Code Q: Process Code
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
.
STP607D 2010. V1
STP607D
P Channel Enhancement Mode MOSFET
-10.0A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter Drain-Source Voltage
Symbo l
VDSS
Typical -60
Gate-Source Voltage
Continuous Drain Current (TJ=150℃)
Pulsed Drain Current
TA=25℃ TA=100℃
VGSS ID
IDM
±20
-10.0 -6.0
-20
Continuous Source Current (Diode Conduction)
IS
-12
Power Dissipation
TA=25℃
PD
25
Operation Junction Temperature
TJ 150
Storgae Temperature Range
TSTG
-55/150
Thermal Resistance-Junction to Ambient
RθJA
20
Unit V V A A A W ℃ ℃
℃/W
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
.
STP607D 2010. V...