STN2018

STN2018 N Channel Enhancement Mode MOSFET 10.0A DESCRIPTION STN2018 is the N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notbook computer power management and other battery powered circuits where high-side switching. PIN CONFIGURATION SOP-8 FEATURE 20V/10A, RDS(ON) = 10mΩ @VGS = 4.5V 20V/7A, RDS(ON) = 15mΩ @VGS = 2.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design PART MARKING SOP-8 STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp . STN2018 2013. V1 STN2018 N Channel Enhancement Mode MOSFET 10.0A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature VGSS ID IDM IS PD TJ Storgae Temperature Range TSTG Thermal Resistance-Junction to Ambient RθJA Typical 20 ±12 10.0 8.0 35 2.3 2.5 1.6 -55/150 -55/150 80 Unit V V A A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyrig...