STN4110

STN4110 N Channel Enhancement Mode MOSFET 40.0A DESCRIPTION STN4110 is used trench technology to provide excellent RDS(on) and gate charge. Those devices are ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. PIN CONFIGURATION (D-PAK) TO-252 TO-251 FEATURE 60V/20.0A, RDS(ON) = 10mΩ (Typ.) @VGS = 10V 60V/20.0A, RDS(ON) = 12mΩ @VGS = 4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability TO-252,TO-251 package design PART MARKING Y: Year Code A: Date Code Q:Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com . STN4110 2010. V1 STN4110 N Channel Enhancement Mode MOSFET 40.0A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current TA=25℃ TA=70℃ VGSS ID IDM Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature IS PD TJ Storgae Temperature Range TSTG Thermal Resistance-Junction to Ambient RθJA Typical 60 ±20 40.0 40.0 180 46 63 31 175 -55/175 16 Unit V V A A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com . STN4110 2010. V1 STN4110 N Channel Enhancement Mode MOSFET 40.0A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter ...