STN4412
N Channel Enhancement Mode MOSFET
6.8A
DESCRIPTION
STN4412 is the N-Channel logic enhancement mode power field e...
STN4412
N Channel Enhancement Mode MOSFET
6.8A
DESCRIPTION
STN4412 is the N-Channel logic enhancement mode power field effect
transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and other battery powered circuits where high-side switching.
PIN CONFIGURATION SOP-8
FEATURE
z 30V/6.8A, RDS(ON) = 28mΩ @VGS = 10V
z 30V/5.6A, RDS(ON) = 36mΩ @VGS = 4.5V
z Super high density cell design for extremely low RDS(ON)
z Exceptional on-resistance and maximum DC current capability
z SOP-8 package design
PART MARKING SOP-8
STN4412 SYA
ORDERING INFORMATION
Part Number STN4412S8RG
Package SOP-8P
Part Marking STN4412
STN4412S8TG
SOP-8P
STN4412
※ Process Code : A ~ Z ; a ~ z ※ STN4412S8RG S8 : SOP-8 ; R : Tape Reel ; G : Pb – Free
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4412 2007. V1
STN4412
N Channel Enhancement Mode MOSFET
6.8A
※ STN4412S8TG S8 : SOP-8 ; T : Tube ; G : Pb – Free
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Symbol Typical
Drain-Source Voltage
VDSS
30
Gate-Source Voltage
Continuous Drain Current (TJ=150℃)
Pulsed Drain Current
TA=25℃ TA=70℃
VGSS ID
IDM
±20
6.8 5.6
30
Continuous Source Current (Diode Conduction)
Power Dissipation
TA=25℃ TA=70℃
Operation ...