STN4488L
N Channel Enhancement Mode MOSFET
20.0A
DESCRIPTION
STN4488L is the N-Channel logic enhancement mode power fiel...
STN4488L
N Channel Enhancement Mode MOSFET
20.0A
DESCRIPTION
STN4488L is the N-Channel logic enhancement mode power field effect
transistors which are produced using high cell density DMOS trench technology. It is suitable for the power management applications in the portable or battery powered system.
PIN CONFIGURATION SOP-8
FEATURE
30V/20A, RDS(ON) = 3.8mΩ (Typ.) @VGS = 10V
30V/18A, RDS(ON) = 5.2mΩ @VGS = 4.5V
Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design
PART MARKING SOP-8
Y:Year Code A: Week Code M: Process Code
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4488L 2009. V1
STN4488L
N Channel Enhancement Mode MOSFET
20.0A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Symbol 10 Sec
Steady state Unit
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
Continuous Drain Current (TJ=150℃)
TA=25℃ TA=70℃
Pulsed Drain Current Continuous Source Current (Diode Conduction)
Power Dissipation
TA=25℃ TA=70℃
Operation Junction Temperature
Storgae Temperature Range
Thermal Resistance-Junction to Ambient
VGSS
ID
IDM IS PD TJ TSTG RθJA
±20
20 15 17 12
80 3.0 3.1 1.7 20 1.1 -55/150
-55/150
Typ 59
Max 75
V
A
A A W ℃ ℃ ℃/W
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4488L 2009. V1
STN4488L
N Channe...