Document
STN4526
N Channel Enhancement Mode MOSFET
10.0A
DESCRIPTION
STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and other battery powered circuits where high-side switching.
PIN CONFIGURATION SOP-8
FEATURE
40V/10.0A, RDS(ON) = 25mΩ (Typ.) @VGS = 10V
40V/8.0A, RDS(ON) = 31mΩ @VGS = 4.5V
Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design
PART MARKING
Y: Year Code A: Process Code
ORDERING INFORMATION
Part Number STN4526
※ Process Code : A ~ Z ; a ~ z
Package SOP-8P
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
Part Marking STN4526
Copyright © 2007, Stanson Corp.
STN4526 2007. V1
STN4526
N Channel Enhancement Mode MOSFET
10.0A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
Continuous Drain Current (TJ=150℃)
Pulsed Drain Current
TA=25℃ TA=70℃
VGSS ID
IDM
Continuous Source Current (Diode Conduction)
Power Dissipation
TA=25℃ TA=70℃
Operation Junction Temperature
IS PD TJ
Storgae Temperature Range
TSTG
Thermal Resistance-Junction to Ambient
RθJA
Typical
40
±20 10.0 8.0 30
2.3 2.5 1.6 150
-55/150
80
Unit V V A A A W ℃ ℃
℃/W
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4526 2007. V1
STN4526
N Channel Enhancement Mode MOSFET
10.0A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
Drain-Source Breakdown Voltage Gate Threshold Voltage
V(BR)DSS VGS=0V,ID=250uA VGS(th) VDS=VGS,ID=250uA
40 1.0
V 3.0 V
Gate Leakage Current
IGSS
VDS=0V,VGS=±20V
±100 nA
Zero Gate Voltage Drain Current
IDSS
VDS=40V,VGS=0V
VDS=40V,VGS=0V TJ=85℃
1 10 uA
Drain-source OnResistance
Forward Transconductance
Diode Forward Voltage
RDS(on) gfs VSD
VGS=10V,ID=10A VGS=4.5V,ID=8A
VDS=15V,ID=6.2AV
IS=2.3A,VGS=0V
25 31
mΩ
13 S
0.8 1.2 V
Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse TransferCapacitance
Turn-On Time
Turn-Off Time
Qg Qgs Qgd Ciss Coss
Crss
td(on) tr
td(off) tf
VDS=20V,VGS=4.5 ID≡5A
VDS =20V,VGS=0V F=1MHz
VDD=20V,RL= 4Ω ID=5.0A,VGEN=10V
RG=1Ω
10 14 2.8 nC 3.2
850
110 pF
75
6 12 10 20 nS 20 36 6 12
TYPICAL CHARACTERICTICS
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4526 2007. V1
STN4526
N Channel Enhancement Mode MOSFET
10.0A
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4526 2007. V1
TYPICAL CHARACTERICTICS
S.