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STN4526 Dataheets PDF



Part Number STN4526
Manufacturers Stanson Technology
Logo Stanson Technology
Description MOSFET
Datasheet STN4526 DatasheetSTN4526 Datasheet (PDF)

STN4526 N Channel Enhancement Mode MOSFET 10.0A DESCRIPTION STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and other battery powered circuits where high-side switching. PIN CONFIGURATION SOP-8 FEATURE 40V/10.0A, RDS(ON) = 25mΩ .

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STN4526 N Channel Enhancement Mode MOSFET 10.0A DESCRIPTION STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and other battery powered circuits where high-side switching. PIN CONFIGURATION SOP-8 FEATURE 40V/10.0A, RDS(ON) = 25mΩ (Typ.) @VGS = 10V 40V/8.0A, RDS(ON) = 31mΩ @VGS = 4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design PART MARKING Y: Year Code A: Process Code ORDERING INFORMATION Part Number STN4526 ※ Process Code : A ~ Z ; a ~ z Package SOP-8P STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Part Marking STN4526 Copyright © 2007, Stanson Corp. STN4526 2007. V1 STN4526 N Channel Enhancement Mode MOSFET 10.0A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current TA=25℃ TA=70℃ VGSS ID IDM Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature IS PD TJ Storgae Temperature Range TSTG Thermal Resistance-Junction to Ambient RθJA Typical 40 ±20 10.0 8.0 30 2.3 2.5 1.6 150 -55/150 80 Unit V V A A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4526 2007. V1 STN4526 N Channel Enhancement Mode MOSFET 10.0A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)DSS VGS=0V,ID=250uA VGS(th) VDS=VGS,ID=250uA 40 1.0 V 3.0 V Gate Leakage Current IGSS VDS=0V,VGS=±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS=40V,VGS=0V VDS=40V,VGS=0V TJ=85℃ 1 10 uA Drain-source OnResistance Forward Transconductance Diode Forward Voltage RDS(on) gfs VSD VGS=10V,ID=10A VGS=4.5V,ID=8A VDS=15V,ID=6.2AV IS=2.3A,VGS=0V 25 31 mΩ 13 S 0.8 1.2 V Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse TransferCapacitance Turn-On Time Turn-Off Time Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VDS=20V,VGS=4.5 ID≡5A VDS =20V,VGS=0V F=1MHz VDD=20V,RL= 4Ω ID=5.0A,VGEN=10V RG=1Ω 10 14 2.8 nC 3.2 850 110 pF 75 6 12 10 20 nS 20 36 6 12 TYPICAL CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4526 2007. V1 STN4526 N Channel Enhancement Mode MOSFET 10.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4526 2007. V1 TYPICAL CHARACTERICTICS S.


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