STN484D
N Channel Enhancement Mode MOSFET
30.0A
DESCRIPTION
STN484D is the N-Channel logic enhancement mode power field ...
STN484D
N Channel Enhancement Mode MOSFET
30.0A
DESCRIPTION
STN484D is the N-Channel logic enhancement mode power field effect
transistor which is produced using high cell density, DMOS trench technology. The STN484D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
PIN CONFIGURATION
TO-252
TO-251
FEATURE
30V/20.0A, RDS(ON) = 8mΩ (Typ.) @VGS = 10V
30V/15.0A, RDS(ON) = 12mΩ @VGS = 4.5V
Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability TO-252,TO-251 package design
PART MARKING
Y: Year Code A: Process Code
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
Copyright © 2009, Stanson Corp.
STN484D 2009. V1
STN484D
N Channel Enhancement Mode MOSFET
30.0A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
Continuous Drain Current (TJ=150℃)
Pulsed Drain Current
TA=25℃ TA=70℃
VGSS ID
IDM
Continuous Source Current (Diode Conduction)
Power Dissipation
TA=25℃ TA=70℃
Operation Junction Temperature
IS PD TJ
Storgae Temperature Range
TSTG
Thermal Resistance-Junction to Ambient
RθJA
Typical
30
±20 30.0 20.0 80
21 50 25 150
-55/150
60
Unit V V A A A W ℃ ℃
℃/W
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca ...