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STN4972 Dataheets PDF



Part Number STN4972
Manufacturers Stanson Technology
Logo Stanson Technology
Description MOSFET
Datasheet STN4972 DatasheetSTN4972 Datasheet (PDF)

STN4972 Dual N Channel Enhancement Mode MOSFET 8.5A DESCRIPTION STN4972 is the Dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. It is suitable for the power management applications in the portable or battery powered system. PIN CONFIGURATION SOP-8 FEATURE z 30V/8.5A, RDS(ON) = 14mΩ@VGS = 10V z 30V/7.8A, RDS(ON) = 18mΩ@VGS = 4.5V z Super high density cell design for extremely low RDS(ON) z Exceptional on-r.

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STN4972 Dual N Channel Enhancement Mode MOSFET 8.5A DESCRIPTION STN4972 is the Dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. It is suitable for the power management applications in the portable or battery powered system. PIN CONFIGURATION SOP-8 FEATURE z 30V/8.5A, RDS(ON) = 14mΩ@VGS = 10V z 30V/7.8A, RDS(ON) = 18mΩ@VGS = 4.5V z Super high density cell design for extremely low RDS(ON) z Exceptional on-resistance and maximum DC current capability z SOP-8 package design PART MARKING SOP-8 ORDERING INFORMATION Part Number Package Part Marking STN4972S8RG SOP-8 STN4972 STN4972S8TG SOP-8 STN4972 ※ Process Code : A ~ Z ; a ~ z ※ STN9972S8RG S8 : SOP-8 ; R : Tape Reel ; G : Pb – Free ※ STN9972S8TG S8 : SOP-8 ; T : Tube ; G : Pb – Free STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4972 2008. V1 STN4972 Dual N Channel Enhancement Mode MOSFET 8.5A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction to Ambient VGSS ID IDM IS PD TJ TSTG RθJA Typical 30 ±20 8.5 7.5 25 2.3 2.5 1.6 -55/150 -55/150 80 Unit V V A A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4972 2008. V1 STN4972 Dual N Channel Enhancement Mode MOSFET 8.5A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)DSS VGS=0V,ID=250uA 30 VGS(th) VDS=VGS,ID=250 uA 1.0 V 3.0 V Gate Leakage Current Zero Gate Voltage Drain Current IGSS IDSS TJ=55℃ VDS=0V,VGS=±20V VDS=24VGS=0V VDS=24VGS=0V ±100 nA 1 5 uA On-State Drain Current Drain-source On-Resistance Forward Tran Conductance ID(on) RDS(on) gfs VDS≥5V,VGS=10 VGS=10V, ID=8.5A VGS=4.5V, ID=7.8A VDS=15.0V,ID=6.2A 25 A 0.012 0.014 Ω 0.015 0.018 13 S Diode Forward Voltage VSD IS=2.3A,VGS=0V 0.8 1.2 V Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse TransferCapacitance Qg Qgs Qgd Ciss Coss Crss VDS=15V,VGS=10V ID=2A VDS=15.0V,VGS=0V f=1MHz 16 4.2 2.5 1350 258 150 nC pF Turn-On Time Turn-Off Time td(on) tr td(off) tf VDD=15V,RL=15Ω ID=5A,VGEN=10V RG=1Ω 15 20 6 16 nS 20 40 12 20 STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4972 2008. V1 STN4972 Dual N Channel Enhancement Mode MOSFET 8.5A TYPICAL CHARACTERICTICS (25℃ Unless Note) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4972 2008. V1 STN4972 Dual N Channel Enhancement Mode MOSFET 8.5A TYPICAL CHARACTERICTICS (25℃ Unless Note) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4972 2008. V1 STN4972 Dual N Channel Enhancement Mode MOSFET 8.5A TYPICAL CHARACTERICTICS (25℃ Unless Note) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4972 2008. V1 SOP-8 PACKAGE OUTLINE STN4972 Dual N Channel Enhancement Mode MOSFET 8.5A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4972 2008. V1 .


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