Document
STN4972
Dual N Channel Enhancement Mode MOSFET
8.5A
DESCRIPTION
STN4972 is the Dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. It is suitable for the power management applications in the portable or battery powered system.
PIN CONFIGURATION SOP-8
FEATURE
z 30V/8.5A, RDS(ON) = 14mΩ@VGS = 10V z 30V/7.8A, RDS(ON) = 18mΩ@VGS = 4.5V z Super high density cell design for
extremely low RDS(ON) z Exceptional on-resistance and maximum
DC current capability z SOP-8 package design
PART MARKING SOP-8
ORDERING INFORMATION
Part Number
Package
Part Marking
STN4972S8RG
SOP-8
STN4972
STN4972S8TG
SOP-8
STN4972
※ Process Code : A ~ Z ; a ~ z ※ STN9972S8RG S8 : SOP-8 ; R : Tape Reel ; G : Pb – Free ※ STN9972S8TG S8 : SOP-8 ; T : Tube ; G : Pb – Free
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4972 2008. V1
STN4972
Dual N Channel Enhancement Mode MOSFET
8.5A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
Continuous Drain Current (TJ=150℃)
TA=25℃ TA=70℃
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
TA=25℃ TA=70℃
Operation Junction Temperature
Storgae Temperature Range
Thermal Resistance-Junction to Ambient
VGSS ID IDM IS PD TJ
TSTG RθJA
Typical
30
±20 8.5 7.5 25
2.3 2.5 1.6 -55/150
-55/150
80
Unit V V A A A W ℃ ℃ ℃/W
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4972 2008. V1
STN4972
Dual N Channel Enhancement Mode MOSFET
8.5A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V(BR)DSS VGS=0V,ID=250uA
30
VGS(th) VDS=VGS,ID=250 uA 1.0
V 3.0 V
Gate Leakage Current
Zero Gate Voltage Drain Current
IGSS
IDSS TJ=55℃
VDS=0V,VGS=±20V VDS=24VGS=0V VDS=24VGS=0V
±100 nA 1 5 uA
On-State Drain Current Drain-source On-Resistance Forward Tran Conductance
ID(on) RDS(on)
gfs
VDS≥5V,VGS=10
VGS=10V, ID=8.5A VGS=4.5V, ID=7.8A
VDS=15.0V,ID=6.2A
25 A 0.012 0.014 Ω
0.015 0.018
13 S
Diode Forward Voltage
VSD IS=2.3A,VGS=0V
0.8 1.2 V
Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance
Output Capacitance
Reverse TransferCapacitance
Qg Qgs Qgd Ciss Coss Crss
VDS=15V,VGS=10V ID=2A
VDS=15.0V,VGS=0V f=1MHz
16 4.2 2.5 1350 258 150
nC pF
Turn-On Time Turn-Off Time
td(on)
tr
td(off)
tf
VDD=15V,RL=15Ω
ID=5A,VGEN=10V RG=1Ω
15 20
6 16 nS 20 40
12 20
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4972 2008. V1
STN4972
Dual N Channel Enhancement Mode MOSFET
8.5A
TYPICAL CHARACTERICTICS (25℃ Unless Note)
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4972 2008. V1
STN4972
Dual N Channel Enhancement Mode MOSFET
8.5A
TYPICAL CHARACTERICTICS (25℃ Unless Note)
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4972 2008. V1
STN4972
Dual N Channel Enhancement Mode MOSFET
8.5A
TYPICAL CHARACTERICTICS (25℃ Unless Note)
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4972 2008. V1
SOP-8 PACKAGE OUTLINE
STN4972
Dual N Channel Enhancement Mode MOSFET
8.5A
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4972 2008. V1
.