STN4972S8RG

STN4972 Dual N Channel Enhancement Mode MOSFET 8.5A DESCRIPTION STN4972 is the Dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. It is suitable for the power management applications in the portable or battery powered system. PIN CONFIGURATION SOP-8 FEATURE z 30V/8.5A, RDS(ON) = 14mΩ@VGS = 10V z 30V/7.8A, RDS(ON) = 18mΩ@VGS = 4.5V z Super high density cell design for extremely low RDS(ON) z Exceptional on-resistance and maximum DC current capability z SOP-8 package design PART MARKING SOP-8 ORDERING INFORMATION Part Number Package Part Marking STN4972S8RG SOP-8 STN4972 STN4972S8TG SOP-8 STN4972 ※ Process Code : A ~ Z ; a ~ z ※ STN9972S8RG S8 : SOP-8 ; R : Tape Reel ; G : Pb – Free ※ STN9972S8TG S8 : SOP-8 ; T : Tube ; G : Pb – Free STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4972 2008. V1 STN4972 Dual N Channel Enhancement Mode MOSFET 8.5A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction to Ambient VGSS ID IDM IS PD TJ TSTG RθJA Typical 30 ±20 8.5 7.5 25 2.3 2.5 1.6 -55/150 -55/15...