N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
AP2R803GS-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-re...
Description
Advanced Power Electronics Corp.
AP2R803GS-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic G
▼ RoHS Compliant & Halogen-Free S
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low □on-
resistance and cost-effectiveness.
The TO-263 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance.
BVDSS RDS(ON) ID
G DS
30V 2.8mΩ
80A
TO-263(S)
Absolute Maximum Ratings
Symbol
Parameter
VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current4 Continuous Drain Current4 Pulsed Drain Current1 Total Power Dissipation
TSTG TJ
Storage Temperature Range Operating Junction Temperature Range
Rating 30 +20 80 80 300 104
-55 to 150 -55 to 150
Units V V A A A W
℃ ℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Data & specifications subject to change without notice
Value 1.2 40
Units ℃/W ℃/W
1 201210121
AP2R803GS-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS RDS(ON)
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss ...
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