AP30T03GH-HF

Advanced Power Electronics Corp. AP30T03GH-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G ▼ RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, □ ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. BVDSS RDS(ON) ID 30V 30mΩ 17A G D S TO-252(H) Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current1 Total Power Dissipation PD@TA=25℃ TSTG TJ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Rating 30 +20 17 10 60 12.5 2 -55 to 150 -55 to 150 Units V V A A A W W ℃ ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount)3 Data & specifications subject to change without notice Value 10 62.5 Units ℃/W ℃/W 1 200909281 AP30T03GH-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss...