isc Silicon NPN Power Transistor
BUV48BFI
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 600V (Min) ·...
isc Silicon
NPN Power
Transistor
BUV48BFI
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 600V (Min) ·High Current Capability ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for switching and industrial applications from
single and three-phase mains.
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Peak tp< 5ms
IB
Base Current-Continuous
IBM
Base Current-peak tp< 5ms
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
1200
V
600
V
7
V
15
A
30
A
4
A
20
A
65
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 1.92 ℃/W
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
VCER(SUS)
Collector-Emitter Sustaining Voltage
IC= 0.5A; L= 2mH; Vclamp= 1200V RBE= 10Ω
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 6A; IB= 1.5A
VCE (sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 4A
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 6A; IB= 1.5A
VBE(sat)-2 Base-Emitter Saturat...