isc Silicon NPN Power Transistor
BUV52
DESCRIPTION ·High Current Capability ·Low Collector Saturation Voltage-
: VCE(s...
isc Silicon
NPN Power
Transistor
BUV52
DESCRIPTION ·High Current Capability ·Low Collector Saturation Voltage-
: VCE(sat)= 0.8V (Max.) @IC= 4A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high current, high speed, high power
applications.
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCEV
Collector-Emitter Voltage (VBE= -1.5V)
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Peak
IB
Base Current-Continuous
IBM
Base Current-peak
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
350
V
250
V
7
V
20
A
30
A
4
A
6
A
150
W
200
℃
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 1.17 ℃/W
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50mA; IC= 0
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 4A; IB= 0.27A IC= 4A; IB= 0.27A; TC= 100℃
VCE (sat)-2
Collector-Emitter Saturation Voltage
IC= 8A; IB= 0.8A IC= 8A; IB= 0.8A; TC= 100℃
VCE (sat)-3
Collector-Emitter Saturation Voltage
IC= 12A; IB= 1.5A IC= 12A; IB= 1.5A;...