BUV66

isc Silicon NPN Power Transistor BUV66 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min.) ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switch mode power supply, UPS, DC and AC motor control applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE VCEV Collector-Emitter Voltage VBE= -1.5V 850 VCEO Collector-Emitter Voltage 450 UNIT V V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 22 A IB Base Current-Continuous 5 A IBM Base Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 7.5 A 100 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.25 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BUV66 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA; IB= 0 450 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 7 VCE(sat) VBE(sat) ICER ICEV Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current IC= 8A; IB= 1.6A IC= 8A; IB= 1.6A; TC= 100℃ IC= 8A; IB= 1.6A IC= 8A; IB= 1.6A; TC= 100℃ VCE= VCEV; RBE= 1...