D2023

SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD2023 DESCRIPTION www.dat·aWshiethet4Tu.Oco-m220C package ·Complement to type 2SB1033 ·Low collector saturation voltage APPLICATIONS ·Low frequency power amplifiers ·Power drivers ·DC-DC converters PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VCBO VCEO VEBO Collector-base voltage Collector-emitter voltage Emitter-base voltage IC Collector current IB Base current PC Collector dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 VALUE 80 60 6 3 1 40 150 -50~150 UNIT V V V A A W SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD2023 CHARACTERISTICS Tj=25 unless otherwise specified www.datasheet4u.com SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 V(BR)CBO Collector-base breakdown voltage IC=50µA; IE=0 V(BR)EBO Emitter-base breakdown voltage IE=50µA; IC=0 VCEsat Collector-emitter saturation voltage IC=2A; IB=0.2A VBEsat Base-emitter saturation voltage IC=2A; IB=0.2A ICBO Collector cut-off current VCB=60V; IE=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE DC current gain COB Collector output capacitance fT Transition frequency IC=1A ; VCE=5V IE=0 ; VCB=10V;f=1MHz IC=0.5A ; VCE=5V MIN TYP. MAX UNIT 60 V 80 V 6V 1.0 V 1.5 V 10 µA 10 µA 60 320 70 pF 8 MHz...