DN2470

DN2470 N-Channel, Depletion-Mode, Vertical DMOS FET Features High-input impedance Low-input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage Applications Normally-on switches Solid state relays Converters Linear amplifiers Constant current sources Battery operated systems Telecom Description This low threshold, depletion-mode, normally-on, transistor utilizes an advanced vertical Diffusion Metal Oxide Semiconductor (DMOS) structure and a well proven silicon-gate manufacturing process. This combination produces a device with the power-handling capabilities of bipolar transistors, plus the high-input impedance and positive-temperature coefficient inherent in Metal-Oxide Semiconductor (MOS) devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS Field-Effect Transistors (FETs) are ideally suited to a wide range of switching and amplifying applications where a very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.  2015 Microchip Technology Inc. DS20005410A-page 1 DN2470 Package Type DRAIN See Table 2-1 for pin information SOURCE GATE TO-252 (D-PAK) DS20005410A-page 2  2015 Microchip Technology Inc. DN2470 1.0 ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS† Drain-to-source voltage..............................