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DN3145N8-G

Supertex

N-Channel Depletion-Mode Vertical DMOS FETs

Supertex inc. N-Channel Depletion-Mode Vertical DMOS FETs DN3145 Features ►► High input impedance ►► Low input capacit...


Supertex

DN3145N8-G

File Download Download DN3145N8-G Datasheet


Description
Supertex inc. N-Channel Depletion-Mode Vertical DMOS FETs DN3145 Features ►► High input impedance ►► Low input capacitance ►► Fast switching speeds ►► Low on-resistance ►► Free from secondary breakdown ►► Low input and output leakage Applications ►► Normally-on switches ►► Solid state relays ►► Converters ►► Constant current sources ►► Power supply circuits ►► Telecom General Description The Supertex DN3145 is a depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Ordering Information Part Number Package Option Packing DN3145N8-G TO-243AA (SOT-89) 2000/Reel -G denotes a lead (Pb)-free / RoHS compliant package. Contact factory for Wafer / Die availablity. Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant. Product Summary BVDSX/BVDGX RDS(ON) (max) 450V 60Ω IDSS (min) 120mA Absolute Maximum Ratings Parameter Value Drain-to-source volt...




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