AP20G45EH/J
Advanced Power Electronics Corp.
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Description
* High Input Impedance * High Pick Current Capability * 4.5V Gate Drive * Strobe Flash Applications
G
C E TO-252(H)
G C E
TO-251(J)
VCES ICP
G
Absolute Maximum Ratings
Symbol
Parameter
VCES
Collector-Emitter Voltage
VGE Gate-Emitter Voltage
IGEP...
