AP20GT60ASP-HF

Advanced Power Electronics Corp. AP20GT60ASP-HF Halogen-Free Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features ▼ High Speed Switching ▼ Low Saturation Voltage VCE(sat),typ.=1.7V@IC=19A ▼ RoHS Compliant Product G C E TO-220(P) VCES IC G 600V 19A C Absolute Maximum Ratings Symbol Parameter VCES VGE IC@TC=25oC IC@TC=100oC ICM IF@TC=100oC IFM PD@TC=25oC TSTG TJ Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current1 Diode Forward Current Diode Pulse Forward Current Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range Notes: 1.Pulse width limited by Max. junction temperature . Rating 600 +20 33 19 72 8 40 78.1 -55 to 150 150 E Units V V A A A A A W oC oC Thermal Data Symbol Parameter Rthj-c Thermal Resistance Junction-Case Rthj-c(Diode) Thermal Resistance Junction-Case Rthj-a Thermal Resistance Junction-Ambient Value 1.6 2.4 62 Units oC/W oC/W oC/W Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions IGES ICES VCE(sat) VCE(sat) VGE(th) Qg Qge Qgc td(on) tr td(off) tf Eon Gate-to-Emitter Leakage Current Collector-Emitter Leakage Current Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Gate Threshold Voltage Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-On Switching Loss VGE=+20V, VCE=0V VCE=600V, VGE=0V VGE=15...