AP20GT60SW

Advanced Power Electronics Corp. AP20GT60SW Halogen-Free Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features ▼ High Speed Switching ▼ Low Saturation Voltage VCE(sat),Typ.=1.8V@IC=20A ▼ Built-in Fast Recovery Diode ▼ RoHS Compliant & Halogen-Free G C E Absolute Maximum Ratings Symbol VCES VGE IC@TC=25℃ IC@TC=100℃ ICM IDM PD@TC=25℃ TSTG TJ TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current1 Collector to Emitter Diode Forward Current 1 Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range Maximum Lead Temp. for Soldering Purposes , 1/8" from case for 5 seconds . C VCES IC TO-3P G Rating 600 +20 40 20 160 40 125 -55 to 150 150 300 600V 20A C E Units V V A A A A W oC oC oC Notes: 1. Pulse width limited by max. junction temperature . Thermal Data . Symbol Parameter Rthj-c Thermal Resistance Junction-Case Rthj-c(Diode) Thermal Resistance Junction-Case Rthj-a Thermal Resistance Junction-Ambient Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol IGES ICES VCE(sat) VGE(th) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Cies Coes Cres Parameter Gate-to-Emitter Leakage Current Collector-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate Threshold Voltage Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Input C...