AP30G120ASW-HF

Advanced Power Electronics Corp. AP30G120ASW-HF Halogen-Free Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD. Features ▼ High Speed Switching ▼ Low Saturation Voltage VCE(sat)=2.9V@IC=30A ▼ CO-PAK, IGBT With FRD ▼ RoHS Compliant & Halogen-Free G C E TO-3P Absolute Maximum Ratings Symbol Parameter VCES Collector-Emitter Voltage VGE Gate-Emitter Voltage IC@TC=25℃ Continuous Collector Current IC@TC=100℃ ICM Continuous Collector Current Pulsed Collector Current1 IF@TC=100℃ Diode Continunous Forward Current IFM Diode Pulse Forward Current PD@TC=25℃ Maximum Power Dissipation TSTG Storage Temperature Range TJ Operating Junction Temperature Range TL Maximum Lead Temp. for Soldering Purposes , 1/8" from case for 5 seconds . VCES IC G Rating 1200 +30 60 30 120 6 40 208 -55 to 150 -55 to 150 300 1200V 30A C E Units V V A A A A A W ℃ ℃ ℃ Notes: 1.Pulse width limited by max . junction temperature . Thermal Data Symbol Parameter Rthj-c(IGBT) Thermal Resistance Junction-Case Rthj-c(Diode) Thermal Resistance Junction-Case Rthj-a Thermal Resistance Junction-Ambient Value 0.6 2 40 Units ℃/W ℃/W ℃/W Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. IGES ICES VCE(sat) Gate-to-Emitter Leakage Current Collector-Emitter Leakage Current Collector-Emitter Saturation Voltage VGE=+30V, VCE=0V VCE=1200V, VGE=0V VGE=15V, IC=30A VGE=15V, IC=60A --- 2.9 - 3.7 VGE(th) Qg Qge Qgc td(on) tr td(of...