AP30G40GEO-HF

Advanced Power Electronics Corp. AP30G40GEO-HF Halogen-Free Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ▼ ICP=150A @VGE=3.0V ▼ Low Gate Drive ▼ Strobe Flash Applications ▼ RoHS Compliant & Halogen-Free C C C C TSSOP-8 G E E E VCE ICP G 400V 150A C E Absolute Maximum Ratings Symbol Parameter VCE VGEP ICP PD@TA=25oC1 TSTG TJ Collector-Emitter Voltage Peak Gate-Emitter Voltage Pulsed Collector Current, VGE @ 3.0V Maximum Power Dissipation Storage Temperature Range Junction Temperature Range Rating 400 +6 150 1 -55 to 150 -55 to 150 Units V V A W oC oC Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. IGES Gate-Emitter Leakage Current VGE=+ 6V, VCE=0V -- ICES Collector-Emitter Leakage Current VCE=400V, VGE=0V -- VCE(sat) Collector-Emitter Saturation Voltage VGE=3V, ICP=150A (Pulsed) - 5.5 VGE(th) Gate Threshold Voltage VCE=VGE, IC=1mA 0.3 - Qg Total Gate Charge IC=40A - 60 Qge Gate-Emitter Charge VCE=200V -6 Qgc Gate-Collector Charge VGE=4V - 25 td(on) Turn-on Delay Time VCC=320V - 200 tr td(off) Rise Time Turn-off Delay Time IC=150A RG=10Ω - 900 - 800 tf Fall Time VGE=3V - 650 Cies Input Capacitance VGE=0V - 4140 Coes Output Capacitance VCE=30V - 30 Cres RthJA1 Reverse Transfer Capacitance f=1.0MHz Thermal Resistance Junction-Ambient - 20 -- Max. +30 10 9 1.2 96 125 Units uA uA V V nC nC nC ns ns ns ns pF pF pF oC/W Notes: 1.Surface mounted on 1 in2 coppe...