AP65SL130AI

Advanced Power Electronics Corp. AP65SL130AI Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test ▼ Fast Switching Characteristic D ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free G S Description AP65SL130A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220CFM package is widely preferred for all commercialindustrial through hole applications. The mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink VDS @ Tj,max. RDS(ON) ID3,4 700V 0.13Ω 26.2A G DS TO-220CFM(I) Absolute Maximum Ratings . Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM dv/dt PD@TC=25℃ PD@TA=25℃ EAS dv/dt Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V3,4 Drain Current, VGS @ 10V3,4 Pulsed Drain Current1 MOSFET dv/dt Ruggedness (VDS = 0 …480V ) Total Power Dissipation Total Power Dissipation Single Pulse Avalanche Energy5 Peak Diode Recovery dv/dt6 TSTG TJ Storage Temperature Range Operating Junction Temperature Range Rating 650 +20 26.2 16.5 66 50 33.7 1.92 300 15 -55 to 150 -55 to 150 Units V V A A A V/ns W W mJ V/ns ℃ ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, ...