MA4PBL027

MA4PBL027 HMIC Silicon Beam Lead PIN Diode Features No Wirebonds Required Rugged Silicon-Glass Construction Silicon Nitride Passivation Polymer Scratch and Impact Protection Low Parasitic Capacitance and Inductance Ultra Low Capacitance < 40 fF Excellent RC Product < 0.10 ps High Switching Cutoff Frequency > 110 GHz 110 Nanosecond Minority Carrier Lifetime Driven by Standard +5 V TTL PIN Diode Driver Description The MA4PBL027 is a silicon beam lead PIN diode fabricated with MACOM’s HMIC™ process. It features one silicon pedestal embedded in a low loss, low dispersion glass which supports the beam-leads. The diode is formed on the top of the pedestal, and air-bridges connect the diode to the beam-leads. The topside is fully encapsulated with silicon nitride and also has an additional polymer layer for scratch and impact protection. These protective coatings prevent damage to the diode junction and air-bridge during handling and assembly. The diodes exhibit low series resistance, low capacitance, and extremely fast switching speed. Applications The ultra low capacitance, low RC product and low profile of the MA4PBL027 makes it an ideal choice for use in microwave and millimeter wave switch designs, where low insertion loss and high isolation are required. The low bias levels of 10 mA in the low loss state and 0 V in the isolation state allows the use of a simple 5 V TTL gate driver. These diodes can be used as switching arrays on radar systems, high speed E...